APT10M07JVR

APT10M07JVR Datasheet

APT10M07JVR

Part	Datasheet
APT10M07JVR	APT10M07JVR (pdf)

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APT10M07JVR 100V 225A SOT-227 S POWER MOS Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested "UL Recognized" • Lower Leakage • Popular SOT-227 Package MAXIMUM RATINGS S All Ratings TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. Avalanche Current 1 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT10M07JVR 100 225 900 ±30 ±40 700 -55 to 150 300 225 50 3600 UNIT Volts Amps Volts Watts W/°C °C Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ID on State Drain Current 2 VDS > ID on x RDS on Max, VGS = 10V RDS on Drain-Source On-State Resistance 2 VGS = 10V, ID[Cont.] IDSS Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V, TC = 125°C IGSS Gate-Source Leakage Current VGS = ±30V, VDS = 0V VGS th Gate Threshold Voltage VDS = VGS, ID = 5.0mA 250 1000 ±100 Volts Amps Ohms nA Volts CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone 541 382-8028 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone 33 5 57 92 15 FAX 541 388-0364 FAX 33 5 56 47 97 61 DYNAMIC CHARACTERISTICS

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APT10M07JVR
100V 225A

SOT-227 S

POWER MOS

Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• 100% Avalanche Tested
"UL Recognized"
• Lower Leakage
• Popular SOT-227 Package

MAXIMUM RATINGS

S All Ratings TC = 25°C unless otherwise specified.

Symbol VDSS ID IDM VGS VGSM

TJ,TSTG TL IAR EAR EAS

Parameter Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. Avalanche Current 1 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4

APT10M07JVR 100 225 900 ±30 ±40 700
-55 to 150 300 225 50 3600

UNIT Volts Amps

Volts Watts W/°C
°C Amps

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA

ID on State Drain Current 2 VDS > ID on x RDS on Max, VGS = 10V

RDS on Drain-Source On-State Resistance 2 VGS = 10V, ID[Cont.]

IDSS

Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V, TC = 125°C

IGSS Gate-Source Leakage Current VGS = ±30V, VDS = 0V

VGS th Gate Threshold Voltage VDS = VGS, ID = 5.0mA
250 1000 ±100

Volts Amps Ohms
nA Volts

CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website -
405 S.W. Columbia Street

Bend, Oregon 97702-1035 Phone 541 382-8028

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone 33 5 57 92 15

FAX 541 388-0364 FAX 33 5 56 47 97 61

DYNAMIC CHARACTERISTICS

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Datasheet ID: APT10M07JVR 648605