KSC5047TU
KSC5047TU Datasheet
KSC5047
| Part | Datasheet |
|---|---|
KSC5047TU |
KSC5047TU (pdf) |
| PDF Datasheet Preview |
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| KSC5047 KSC5047 • High Current Gain • Low Collector Emitter Saturation Voltage TO-3P 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO ICBO IEBO hFE VCE sat VBE sat tON tSTG tF Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn On Time Storage Time Fall Time IC = 50mA, IB = 0 VCB = 100V, IE = 0 VEB = 15V, IC= 0 VCE = 5V, IC = 5A IC = 5A, IB = 0.12A IC = 5A, IB = 0.12A VCC = 20V, IC = 5A IB1 = - I B2 = 0.12A RL = Value 100 50 15 4 100 150 - 55 ~ 150 Units V A W °C °C Min. 50 Typ. Max. Units V µA µA 2002 Fairchild Semiconductor Corporation Typical Characteristics hFE, DC CURRENT GAIN 1000 100 V = 5V CE I [A], COLLECTOR CURRENT Figure DC current Gain 10000 Cob[pF], CAPACITANCE 1000 1000 VCB[V], COLLECTOR-BASE VOLTAGE Figure Collector Output Capacitance PC[W], POWER DISSIPATION 160 140 120 100 80 60 40 20 TC[oC], TEMPERATURE Figure Power Derating |
| More datasheets: SA704A/DF14(76) | SA704A/DF14(77) | SA704A/DF14(61) | SA704A/DF14(83) | SA704A/DF14(75) | SA704A/DF14 | SA704A/DF14(82) | DDMMV43H2PN | KSE182PWD | RN-4870-SNSR |
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