KSE182PWD

KSE182PWD Datasheet


KSE180/181/182

Part Datasheet
KSE182PWD KSE182PWD KSE182PWD (pdf)
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KSE180/181/182

KSE180/181/182

Low Power Audio Amplifier Low Current High Speed Switching Applications

NPN Epitaxial Silicon Transistor

TO-126

Emitter 2.Collector 3.Base

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol VCBO

Collector-Base Voltage

Parameter

KSE180 KSE181 KSE182

Value
60 80 100

VCEO

Collector-Emitter Voltage KSE180

KSE181

KSE182

VEBO IC ICP IB PC

TJ TSTG

Emitter-Base Voltage Collector Current DC Collector Current Pulse Base Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature
7 3 6 1 150 - 65 ~ 150

Electrical Characteristics TC=25°C unless otherwise noted

Symbol BVCEO

Parameter

Collector -Emitter Breakdown Voltage KSE180 KSE181 KSE182

Test Condition IC = 10mA, IB = 0

Min.
40 60 80

ICBO

Collector Cut-off Current KSE180 KSE181 KSE182 KSE180 KSE181 KSE182

VCB = 60V, IB = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCB = 60V, IE = 0 TC = 150°C VCB = 80V, IE = 0 TC = 150°C VCB = 100V, IE = 0 TC = 150°C

IEBO

Emitter Cut-off Current

VBE = 7V, IC = 0

DC Current Gain

VCE = 1V, IC = 100mA

VCE = 1V, IC = 500mA

VCE = 1V, IC = 1.5A
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Datasheet ID: KSE182PWD 634251