SEP8506-002
SEP8506-002 Datasheet
SEP8506
| Part | Datasheet |
|---|---|
SEP8506-002 |
SEP8506-002 (pdf) |
| Related Parts | Information |
|---|---|
SEP8506-003 |
SEP8506-003 |
SEP8506-001 |
SEP8506-001 |
| PDF Datasheet Preview |
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| SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger The SEP8506 is a gallium arsenide infrared emitting diode molded in a side-emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. INFRA-20.TIF OUTLINE DIMENSIONS in inches mm Tolerance 3 plc decimals 2 plc decimals DIM_071.ds4 Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SEP8506 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS Free-Air Temperature unless otherwise noted Continuous Forward Current 50 mA Power Dissipation 100 mW [À] Storage Temperature Range Operating Temperature Range Soldering Temperature 5 sec Notes Derate linearly from free-air temperature at the rate of SCHEMATIC Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SEP8506 GaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement gra_030.ds4 Relative intensity -60 -45 -30 -15 0 +15 +30 +45 +60 Angular displacement - degrees Fig. 3 Forward Voltage vs Forward Current Forward voltage - V Forward current - mA gra_003.ds4 |
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