APTM50DUM19G

APTM50DUM19G Datasheet

APTM50DUM19G

Part	Datasheet
APTM50DUM19G	APTM50DUM19G (pdf)

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APTM50DUM19G Dual common source MOSFET Power Module VDSS = 500V RDSon = typ Tj = 25°C ID = 163A Tc = 25°C D1 D2 S2 G2 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Low profile • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current Tc = 25°C Tc = 80°C IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance ±30 PD Maximum Power Dissipation Tc = 25°C 1136 IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 2500 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on APTM50DUM19G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IDSS Zero Gate Voltage Drain Current RDS on VGS th IGSS Drain Source on Resistance Gate Threshold Voltage Gate Source Leakage Current VGS = 0V,VDS = 500V Tj = 25°C VGS = 0V,VDS = 400V Tj = 125°C VGS = 10V, ID = 81.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V 200 µA 1000 19 5V ±200 nA Dynamic Characteristics

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APTM50DUM19G

Dual common source MOSFET Power Module

VDSS = 500V RDSon = typ Tj = 25°C ID = 163A Tc = 25°C

D1 D2

S2 G2

Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies

Features
• Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
• Kelvin source for easy drive
• Very low stray inductance - Symmetrical design - M5 power connectors
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant

Absolute maximum ratings

Parameter

Max ratings Unit

VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current

Tc = 25°C

Tc = 80°C

IDM VGS RDSon

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance
±30

PD Maximum Power Dissipation

Tc = 25°C
1136

IAR Avalanche current repetitive and non repetitive

EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy
2500

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on

APTM50DUM19G

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

IDSS Zero Gate Voltage Drain Current

RDS on VGS th IGSS

Drain Source on Resistance Gate Threshold Voltage Gate Source Leakage Current

VGS = 0V,VDS = 500V Tj = 25°C

VGS = 0V,VDS = 400V Tj = 125°C

VGS = 10V, ID = 81.5A

VGS = VDS, ID = 10mA

VGS = ±30 V, VDS = 0V
200 µA 1000 19
5V ±200 nA

Dynamic Characteristics

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Datasheet ID: APTM50DUM19G 648905