SDB20S30
SDB20S30 Datasheet
SDB20S30 SiC Schottky Diode
| Part | Datasheet |
|---|---|
SDB20S30 |
SDB20S30 (pdf) |
| PDF Datasheet Preview |
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| the switching behavior • No forward recovery SDB20S30 SiC Schottky Diode Product Summary VRRM 300 V 23 nC 2x10 A PG-TO263 Type SDB20S30 Package PG-TO263 Ordering Code Q67040-S4374 Marking D20S30 Maximum Ratings, at Tj = 25 °C, unless otherwise specified per leg Parameter Value Continuous forward current, TC=100°C RMS forward current, f=50Hz IFRMS Surge non repetitive forward current, sine halfwave IFSM TC=25°C, tp=10ms Repetitive peak forward current IFRM Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward current IFMAX tp=10µs, TC=25°C VRRM VRSM Power dissipation, single diode mode, TC=25°C Ptot Operating and storage temperature Tj , Tstg +175 Unit A V W °C 2007-03-27 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case per leg SMD version, device on PCB: min. footprint P-TO263-3-2 6 cm2 cooling area 1 SDB20S30 Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified per leg Parameter Values Unit min. typ. max. Static Characteristics Diode forward voltage IF=10A, Tj=25°C IF=10A, Tj=150°C |
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