PTMA180402ELV1R250XTMA1
PTMA180402ELV1R250XTMA1 Datasheet
PTMA180402EL PTMA180402FL
| Part | Datasheet |
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PTMA180402ELV1R250XTMA1 |
PTMA180402ELV1R250XTMA1 (pdf) |
| Related Parts | Information |
|---|---|
PTMA180402ELV1XWSA1 |
PTMA180402ELV1XWSA1 |
PTMA180402FLV1XWSA1 |
PTMA180402FLV1XWSA1 |
PTMA180402FL V1 R250 |
PTMA180402FL V1 R250 |
| PDF Datasheet Preview |
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| PTMA180402EL PTMA180402FL Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 2000 MHz The PTMA180402EL and PTMA180402FL are matched, wideband PTMA180402EL 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in all Package H-33265-8 typical modulation formats from 1800 to 2000 MHz. These devices are offered in thermally-enhanced ceramic packages for cool and ts reliable operation. PTMA180402FL Package H-34265-8 Gain dB Return Loss dB oduc Broadband Performance r VDD = 28 V, IDQ1 = 110 mA, IDQ1 = 330 mA Gain in Return Loss on 5 disc 1700 1800 1900 2000 2100 Frequency MHz -30 2200 • Designed for wide RF and modulation bandwidths and low memory effects • On-chip matching, integrated input DC block, input and > 5-ohm output • Typical single-carrier CDMA performance at 1960 MHz, 28 V - Average output power = 4 W - Linear gain = 30 dB - Efficiency = 14% - Adjacent channel power = dBc • Typical 2-tone performance, 1960 MHz, 28 V - Output power PEP = 50 W at IM3 = dBc - Efficiency = 33% • Capable of handling 10:1 VSWR 28 V, 40 W CW output power • Integrated ESD protection. Meets HBM Class 1B minimum , per JESD22-A114F • High-performance, thermally-enhanced packages, Pb-free and RoHS compliant, with solder-friendly plating All published data at TCASE = 25°C unless otherwise indicated ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 12 PTMA180402EL PTMA180402FL RF Characteristics CDMA Measurements tested in Infineon test fixture VDD = 28 V, IDQ1 = 110 mA, IDQ2 = 335 mA, POUT = 4 W average, = 1960 MHz Characteristic Max Unit Gain Drain Efficiency Adjacent Channel Power Ratio DC Characteristics Stage 1 Characteristics Drain Leakage Current Gate Leakage Current Conditions VDS = 28 V, VGS = 0 V VDS = 63 V, VGS = 0 V VGS = 10 V, VDS = 0 V ηD ACPR ucts Symbol d IDSS Ordering Information Type and Version PTMA180402EL V1 Package Type H-33265-8 ts 1st Stage c 2nd Stage TSTG to +150 °C °C °C/W °C/W odu Package Description pr Themally-enhanced, slotted flange Shipping Tray PTMA180402EL V1 R50 PTMA180402FL V1 d PTMA180402FL V1 R50 H-33265-8 H-34265-8 H-34265-8 Themally-enhanced, slotted flange Themally-enhanced, earless flange Themally-enhanced, earless flange ue Typical Performance data taken in a production test fixture Tape Tray Tape ntin CW Performance o VDD = 28 V, IDQ1 = 110 mA, IDQ2 = 330 mA c 32 is 31 d Gain Efficiency 40 Two-tone at Selected Frequencies VDD = 28 V, IDQ1 = 130 mA, IDQ2 = 330 mA 40 35 30 -20 -25 -30 20 Efficiency IMD3 -45 27 30 = 1930 MHz = 1960 MHz = 1990 MHz Output Power dBm = 1930 MHz = 1960 MHz = 1990 MHz Output Power, avg. dBm -60 45 Gain dB Power Added Efficiency % PAE % IMD3 dBc Data Sheet 3 of 12 Typical Performance cont. PTMA180402EL PTMA180402FL Adj. Ch. Power Ratio dBc ACPR dBc IS-95 at Selected Frequencies VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA IS-95 at Selected Temperatures VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA, = 1960 MHz |
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