DI9956
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DI9956T (pdf) |
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DI9956 POWER SEMICONDUCTOR DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR • High Cell Density DMOS Technology • Lower On-State Resistance • High Power and Current Capability • Fast Switching Speed • High Transient Tolerance D2 5 D2 6 D1 7 4 G2 3 S2 2 G1 8 765 VIEW 1234 Mechanical Data • SO-8 Plastic Case • Terminal Connections See Outline Drawing and Internal Circuit Diagram above SO-8 Dim Min Max J Nominal P Nominal All Dimensions in mm Maximum Ratings TA = 25°C unless otherwise specified Characteristic Value Unit Drain-Source Voltage VDSS Gate-Source Voltage VGSS ±20 Drain Current Note 1a Continuous Pulsed ±15 Power Dissipation for: Dual Operation Note 1d Single Operation Note 1a Note 1b Note 1c Operating and Storage Temperature Range Tj, TSTG -55 to +150 Thermal Characteristics TA = 25°C unless otherwise specified Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Symbol RΘJA RΘJC |
More datasheets: T555711-TAS | T555715-PAE | T555711-DDW | T555714-DDW | T555711-DDT | FE077-A/125850 | PCM-3618-AE | ADP5350CP-EVALZ | 264-7SURC/S530-A4 | 15003 |
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