DI9956T

DI9956T Datasheet


DI9956

Part Datasheet
DI9956T DI9956T DI9956T (pdf)
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DI9956

POWER SEMICONDUCTOR

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
• High Cell Density DMOS Technology
• Lower On-State Resistance
• High Power and Current Capability
• Fast Switching Speed
• High Transient Tolerance

D2 5 D2 6 D1 7
4 G2 3 S2 2 G1
8 765

VIEW
1234

Mechanical Data
• SO-8 Plastic Case
• Terminal Connections See Outline Drawing
and Internal Circuit Diagram above

SO-8

Dim Min Max

J Nominal

P Nominal

All Dimensions in mm

Maximum Ratings TA = 25°C unless otherwise specified

Characteristic

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS
±20

Drain Current

Note 1a Continuous Pulsed
±15

Power Dissipation for:

Dual Operation Note 1d

Single Operation Note 1a Note 1b

Note 1c

Operating and Storage Temperature Range

Tj, TSTG
-55 to +150

Thermal Characteristics TA = 25°C unless otherwise specified

Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

Note 1a Note 1

Symbol RΘJA RΘJC
More datasheets: T555711-TAS | T555715-PAE | T555711-DDW | T555714-DDW | T555711-DDT | FE077-A/125850 | PCM-3618-AE | ADP5350CP-EVALZ | 264-7SURC/S530-A4 | 15003


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Datasheet ID: DI9956T 509916