T555711-DDW

T555711-DDW Datasheet

• Contactless Read/Write Data Transmission • Radio Frequency fRF from 100 kHz to 150 kHz • e5550 Binary Compatible or T5557 Extended Mode • Small Size, Configurable for ISO/IEC 11784/785 Compatibility • 75 pF On-chip Resonant Capacitor Mask Option • 7 x 32-bit EEPROM Data Memory Including 32-bit Password • Separate 64-bit memory for Traceability Data • 32-bit Configuration Register in EEPROM to Setup:

Part	Datasheet
T555711-DDW	T555711-DDW (pdf)

Related Parts	Information
T555714-DBW	T555714-DBW
T555711-TAS	T555711-TAS
T555715-PAE	T555715-PAE
T555714-DDW	T555714-DDW
T555711-DDT	T555711-DDT

PDF Datasheet Preview
• Contactless Read/Write Data Transmission • Radio Frequency fRF from 100 kHz to 150 kHz • e5550 Binary Compatible or T5557 Extended Mode • Small Size, Configurable for ISO/IEC 11784/785 Compatibility • 75 pF On-chip Resonant Capacitor Mask Option • 7 x 32-bit EEPROM Data Memory Including 32-bit Password • Separate 64-bit memory for Traceability Data • 32-bit Configuration Register in EEPROM to Setup: Data Rate - RF/2 to RF/128, Binary Selectable or - Fixed e5550 Data Rates Modulation/Coding - FSK, PSK, Manchester, Biphase, NRZ Other Options - Password Mode - Max Block Feature - Answer-On-Request AOR Mode - Inverse Data Output - Direct Access Mode - Sequence Terminator s - Write Protection Through Lock-bit per Block - Fast Write Method 5 kbps versus 2 kbps - OTP Functionality - POR Delay up to 67 ms Multifunctional 330-bit Read/Write RF-Identification IC T5557 The T5557 is a contactless R/W IDentification IC for applications in the 125 kHz frequency range. A single coil, connected to the chip, serves as the IC’s power supply and bi-directional communication interface. The antenna and chip together form a transponder or tag. The on-chip 330-bit EEPROM 10 blocks, 33 bits each can be read and written blockwise from a reader. Block 0 is reserved for setting the operation modes of the T5557 tag. Block 7 may contain a password to prevent unauthorized writing. Data is transmitted from the IDIC using load modulation. This is achieved by damping the RF field with a resistive load between the two terminals Coil 1 and Coil The IC receives and decodes 100% amplitude modulated OOK pulse interval encoded bit streams from the base station or reader. System Block Diagram Figure RFID System Using T5557 Tag Reader Baseorstation Base station Power Data Coil interface Controller Transponder Memory T5557 * Mask option T5557 Building Blocks Figure Block Diagram Coil 1 Coil 2 * Mask option Analog front end Bit-rate generator Write decoder Modulator Mode register Controller Test logic Memory 330-bit EEPROM Input register HV generator Analog Front End AFE The AFE includes all circuits which are directly connected to the coil. It generates the IC’s power supply and handles the bi-directional data communication with the reader. It consists of the following blocks • Rectifier to generate a DC supply voltage from the AC coil voltage • Clock extractor • Switchable load between Coil 1/Coil 2 for data transmission from tag to the reader • Field gap detector for data transmission from the base station to the tag • ESD protection circuitry Data-rate Generator The data rate is binary programmable to operate at any data rate between RF/2 and RF/128 or equal to any of the fixed e5550/e5551 and T5554 bitrates RF/8, RF/16, RF/32, RF/40, RF/50, RF/64, RF/100 and RF/128 . Write Decoder This function decodes the write gaps and verifies the validity of the data stream according to the Atmel e555x write method pulse interval encoding . HV Generator This on-chip charge pump circuit generates the high voltage required for programming of the EEPROM. DC Supply Power is externally supplied to the IDIC via the two coil connections. The IC rectifies and regulates this RF source and uses it to generate its supply voltage. 2 T5557 T5557 Ordering Information 2 T 5 7 a b M c - x Package - DDW - Dice on wafer, 6” un-sawn wafer, thickness 300 µm - DDT - Dice in tray waffle pack , thickness 300 µm - DBW - Dice on solder bumped wafer, thickness 390 µm Sn63Pb37 on 5 µm Ni/Au, height 70 µm - TAS - SO8 package - PAE - MOA2 mocro-module Customer ID 1 - Atmel standard corresponds to “0” - Customer “X” unique ID code 1 - 2 pads withput on-chip C - 4 pads with on-chip 75 pF - Micro-module with 330 pF - 2 pads without C, damping during initialization Drawing Figure 27 on page 23 Figure 28 on page 23 Figure 31 on page 26 Figure 29 on page 24 Figure 26 on page 22 Figure 27 on page 23 Figure 29 on page 24 Figure 26 on page 22 Notes Unique customer ID code programming according to Figure 5 is linked to a minimum order quantity of 1 Mio parts per year. For available order codes refer to Atmel Sales/Marketing. Ordering Examples Recommended T555711-DDW Tested dice on unsawn 6” wafer, thickness 300 µm, no on-chip capacitor, no damping during POR initialisation especially for ISO 11784/785 and access control applications Available Order Codes T555711-DDW, DDT, TAS T555714-DDW, DBW, TAS T555715-PAE New order codes will be done on customer request if order quantities are upside 250k pieces. Package Information Figure 2 Pad Layout for Wire Bonding D im ensions in µm 124 994 94 934 72 125 T5557 22 T5557 Figure 4 Pad Flip-chip Version with 70 µm Solder Bumps Dimensions in µm 94 60 994 82 T5557 T5557C4 934 92 100 107 100 Figure Solder bump on NiAu 70µm AL bondpad PbSn Ni Passivation Figure Wafer Map Failed Die Identification Every die on the wafer not passing Atmel test sequence is marked with inch. The inch dot specification • Dot size 200 µm • Position center of die • Color black 24 T5557 Figure NOA2 Micromodule T5557 Figure Shipping Reel Ø329,6 41,4 to max 43,0 120° 3x 2,3 Ø171 Ø175 R1,14 Ø13 16,7 Ø298,5 26 T5557 Figure SO8 Package

PDF Datasheet Preview

• Contactless Read/Write Data Transmission
• Radio Frequency fRF from 100 kHz to 150 kHz
• e5550 Binary Compatible or T5557 Extended Mode
• Small Size, Configurable for ISO/IEC 11784/785 Compatibility
• 75 pF On-chip Resonant Capacitor Mask Option
• 7 x 32-bit EEPROM Data Memory Including 32-bit Password
• Separate 64-bit memory for Traceability Data
• 32-bit Configuration Register in EEPROM to Setup:

Data Rate - RF/2 to RF/128, Binary Selectable or - Fixed e5550 Data Rates

Modulation/Coding - FSK, PSK, Manchester, Biphase, NRZ

Other Options - Password Mode - Max Block Feature - Answer-On-Request AOR Mode - Inverse Data Output - Direct Access Mode - Sequence Terminator s - Write Protection Through Lock-bit per Block - Fast Write Method 5 kbps versus 2 kbps - OTP Functionality - POR Delay up to 67 ms

Multifunctional 330-bit Read/Write RF-Identification IC

T5557

The T5557 is a contactless R/W IDentification IC for applications in the 125 kHz frequency range. A single coil, connected to the chip, serves as the IC’s power supply and bi-directional communication interface. The antenna and chip together form a transponder or tag.

The on-chip 330-bit EEPROM 10 blocks, 33 bits each can be read and written blockwise from a reader. Block 0 is reserved for setting the operation modes of the T5557 tag. Block 7 may contain a password to prevent unauthorized writing.

Data is transmitted from the IDIC using load modulation. This is achieved by damping the RF field with a resistive load between the two terminals Coil 1 and Coil The IC receives and decodes 100% amplitude modulated OOK pulse interval encoded bit streams from the base station or reader.

System Block Diagram

Figure RFID System Using T5557 Tag

Reader Baseorstation Base station

Power Data

Coil interface Controller

Transponder

Memory

T5557
* Mask option

T5557 Building Blocks

Figure Block Diagram

Coil 1

Coil 2
* Mask option

Analog front end

Bit-rate generator

Write decoder

Modulator Mode register Controller Test logic

Memory 330-bit EEPROM

Input register HV generator

Analog Front End AFE

The AFE includes all circuits which are directly connected to the coil. It generates the IC’s power supply and handles the bi-directional data communication with the reader. It consists of the following blocks
• Rectifier to generate a DC supply voltage from the AC coil voltage
• Clock extractor
• Switchable load between Coil 1/Coil 2 for data transmission from tag to the reader
• Field gap detector for data transmission from the base station to the tag
• ESD protection circuitry

Data-rate Generator

The data rate is binary programmable to operate at any data rate between RF/2 and RF/128 or equal to any of the fixed e5550/e5551 and T5554 bitrates RF/8, RF/16, RF/32, RF/40, RF/50, RF/64, RF/100 and RF/128 .

Write Decoder

This function decodes the write gaps and verifies the validity of the data stream according to the Atmel e555x write method pulse interval encoding .

HV Generator

This on-chip charge pump circuit generates the high voltage required for programming of the EEPROM.

DC Supply

Power is externally supplied to the IDIC via the two coil connections. The IC rectifies and regulates this RF source and uses it to generate its supply voltage.
2 T5557

T5557
Ordering Information 2

T 5 7 a b M c - x Package
- DDW
- Dice on wafer, 6” un-sawn wafer, thickness 300 µm
- DDT
- Dice in tray waffle pack , thickness 300 µm
- DBW
- Dice on solder bumped wafer, thickness 390 µm Sn63Pb37 on 5 µm Ni/Au, height 70 µm
- TAS
- SO8 package
- PAE
- MOA2 mocro-module

Customer ID 1
- Atmel standard corresponds to “0”
- Customer “X” unique ID code 1
- 2 pads withput on-chip C
- 4 pads with on-chip 75 pF
- Micro-module with 330 pF
- 2 pads without C, damping during initialization

Drawing

Figure 27 on page 23 Figure 28 on page 23 Figure 31 on page 26 Figure 29 on page 24

Figure 26 on page 22 Figure 27 on page 23 Figure 29 on page 24 Figure 26 on page 22

Notes Unique customer ID code programming according to Figure 5 is linked to a minimum order quantity of 1 Mio parts per year. For available order codes refer to Atmel Sales/Marketing.
Ordering Examples Recommended

T555711-DDW

Tested dice on unsawn 6” wafer, thickness 300 µm, no on-chip capacitor, no damping during POR initialisation especially for ISO 11784/785 and access control applications

Available Order Codes

T555711-DDW, DDT, TAS T555714-DDW, DBW, TAS T555715-PAE

New order codes will be done on customer request if order quantities are upside 250k pieces.

Package Information

Figure 2 Pad Layout for Wire Bonding

D im ensions in µm
124 994
94 934 72 125

T5557
22 T5557

Figure 4 Pad Flip-chip Version with 70 µm Solder Bumps

Dimensions in µm
94 60
994 82

T5557

T5557C4
934 92 100
107 100

Figure Solder bump on NiAu 70µm

AL bondpad

PbSn Ni Passivation

Figure Wafer Map

Failed Die Identification

Every die on the wafer not passing Atmel test sequence is marked with inch. The inch dot specification
• Dot size 200 µm
• Position center of die
• Color black
24 T5557

Figure NOA2 Micromodule

T5557

Figure Shipping Reel
Ø329,6
41,4 to max 43,0
120° 3x
2,3 Ø171
Ø175

R1,14 Ø13
16,7
Ø298,5
26 T5557

Figure SO8 Package

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Datasheet ID: T555711-DDW 519404