KIT8020-CRD-8FF1217P-1

KIT8020-CRD-8FF1217P-1 Datasheet

KIT8020CRD8FF1217P-1 CREE Silicon Carbide MOSFET Evaluation Kit

Part	Datasheet
KIT8020-CRD-8FF1217P-1	KIT8020-CRD-8FF1217P-1 (pdf)

PDF Datasheet Preview
KIT8020CRD8FF1217P-1 CREE Silicon Carbide MOSFET Evaluation Kit User’s Manual This document is prepared as a user reference guide to install and operate CREE evaluation hardware. Safety Note Cree designed evaluation hardware is meant to be an evaluation tool in a lab setting for Cree components and to be handled and operated by highly qualified technicians or engineers. The hardware is not designed to meet any particular safety standards and the tool is not a production qualified assembly Subject to change without notice. Introduction This Evaluation kit is meant to demonstrate the high performance of CREE 1200V SiC MOSFET and SiC Schottky diodes SBD in the standard TO-247 package. It can be easily configured for several topologies from the basic phase-leg configuration. The evaluation EVL board can be used for the following purposes: • Evaluate the SiC MOSFET performance during switching events and steady state operation. • Easily configure different topologies with SiC MOSFET and SiC diodes • Functional testing with SiC MOSFET, for example double pulse test to measure switching losses Eon and Eoff . • PCB layout example for driving the Cree MOSFET. • Gate drive reference design for a TO-247 packaged Cree MOSFET. • Comparative testing between Cree devices and IGBTs. This user manual will include information on the EVL board architecture, hardware configuration, Cree SiC power devices and an example application when using this board. Package Contents Item No. 1 2 3 4 5 6 7 8 9 10 11 12 QTY P/N 1 CRD8FF1217P-1 Avago Driver version Eval board 4 AOS2182471 Ceramic tile 1 57908 Heat sink with mounting holes 2 C2M0080120D 80 mohm MOSFET 2 C4D20120D 20A Diode Copper shorting strip 2 74270011 Ferrite Bead 8 91166a210 M3 washer, Zn-S, 7mm OD, 3.2mm ID 4 92005a129 M3x22mm, Zn-S, Board mounting Screw 4 94669a727 Stand offs, Al spacer, 6mm OD x 14mm 4 92005a120 M3x10mm, Zn-S, Device mounting screw User Guide EVL Board Overview The EVL board’s general block diagram is shown in Figure There is a phase-leg which can include two SiC MOSFETs Q1 and Q2 with half bridge phase-leg configuration and two anti-parallel SiC schottky diodes D1 and D3 with Q1 and Q2. The gate drive block with electrical isolation is designed on the board to drive SiC MOSFET Q1 and Q2. There are four power trace connectors CON1, CON2, CON3 and CON5 and one 10 pin signal/supply voltage connector CON4 on board. Figure General block diagram of Cree Discrete SiC EVL board Please note that JM1 as shown in Figure 1 is open circuit. It is necessary to short this with a wire or insert a shunt as shown in section to complete the circuit before operation. CRD8FF1217P-1 includes two 2.5A gate driver integrating opto-coupler from Avago ACPL-W346 and two 2W isolation DC/DC converters from Mornsun G1212S-2W for both high side and low side isolated power. The 2W DC/DC converter with +12V Vcc input generates +24V Vcc_out output voltage with 6KVDC isolation that is supplying voltage to W346 on push-pull gate drive of the secondary side as shown in Figure In this circuit, a 5V zener in parallel with 1uF capacitor is used to generate -5V Vgs voltage for the SiC MOSFET turn-off and turn-on Vgs voltage is equal to 24V-5V=19V. Note that SiC MOSFET can be turned off with zero voltage, and the -5V turn-off voltage helps with faster turn-off and lower turn-off losses and also improves dv/dt induced self turn-on and noise immunity during transient periods with more margin for Vgs turn-on threshold voltage. You can implement any PWM signal to drive the SiC phase leg block, if the board is operating in synchronous mode with high side MOSFET and low side MOSFET, the input signals must have additional dead time to avoid shoot through. Vcc DC/DC Vcc_out ACPL-W346 HS_I/P

PDF Datasheet Preview

KIT8020CRD8FF1217P-1 CREE Silicon Carbide MOSFET Evaluation Kit

User’s Manual

This document is prepared as a user reference guide to install and operate CREE evaluation hardware.

Safety Note Cree designed evaluation hardware is meant to be an evaluation tool in a lab setting for Cree components and to be handled and operated by highly qualified technicians or engineers. The hardware is not designed to meet any particular safety standards and the tool is not a production qualified assembly

Subject to change without notice.

Introduction

This Evaluation kit is meant to demonstrate the high performance of CREE 1200V SiC MOSFET and SiC Schottky diodes SBD in the standard TO-247 package. It can be easily configured for several topologies from the basic phase-leg configuration. The evaluation EVL board can be used for the following purposes:
• Evaluate the SiC MOSFET performance during switching events and steady state operation.
• Easily configure different topologies with SiC MOSFET and SiC diodes
• Functional testing with SiC MOSFET, for example double pulse test to
measure switching losses Eon and Eoff .
• PCB layout example for driving the Cree MOSFET.
• Gate drive reference design for a TO-247 packaged Cree MOSFET.
• Comparative testing between Cree devices and IGBTs. This user manual will include information on the EVL board architecture, hardware configuration, Cree SiC power devices and an example application when using this board.

Package Contents

Item No.
1 2 3 4 5 6 7 8 9 10 11 12

QTY P/N
1 CRD8FF1217P-1 Avago Driver version Eval board
4 AOS2182471 Ceramic tile
1 57908

Heat sink with mounting holes
2 C2M0080120D 80 mohm MOSFET
2 C4D20120D
20A Diode

Copper shorting strip
2 74270011

Ferrite Bead
8 91166a210

M3 washer, Zn-S, 7mm OD, 3.2mm ID
4 92005a129

M3x22mm, Zn-S, Board mounting Screw
4 94669a727

Stand offs, Al spacer, 6mm OD x 14mm
4 92005a120

M3x10mm, Zn-S, Device mounting screw

User Guide

EVL Board Overview

The EVL board’s general block diagram is shown in Figure There is a phase-leg which can include two SiC MOSFETs Q1 and Q2 with half bridge phase-leg configuration and two anti-parallel SiC schottky diodes D1 and D3 with Q1 and Q2. The gate drive block with electrical isolation is designed on the board to drive SiC MOSFET Q1 and Q2. There are four power trace connectors CON1, CON2, CON3 and CON5 and one 10 pin signal/supply voltage connector CON4 on board.

Figure General block diagram of Cree Discrete SiC EVL board

Please note that JM1 as shown in Figure 1 is open circuit. It is necessary to short this with a wire or insert a shunt as shown in section to complete the circuit before operation.

CRD8FF1217P-1 includes two 2.5A gate driver integrating opto-coupler from Avago ACPL-W346 and two 2W isolation DC/DC converters from Mornsun G1212S-2W for both high side and low side isolated power. The 2W DC/DC converter with +12V Vcc input generates +24V Vcc_out output voltage with 6KVDC isolation that is supplying voltage to W346 on push-pull gate drive of the secondary side as shown in Figure In this circuit, a 5V zener in parallel with 1uF capacitor is used to generate -5V Vgs voltage for the SiC MOSFET turn-off and turn-on Vgs voltage is equal to 24V-5V=19V. Note that SiC MOSFET can be turned off with zero voltage, and the -5V turn-off voltage helps with faster turn-off and lower turn-off losses and also improves dv/dt induced self turn-on and noise immunity during transient periods with more margin for Vgs turn-on threshold voltage. You can implement any PWM signal to drive the SiC phase leg block, if the board is operating in synchronous mode with high side MOSFET and low side MOSFET, the input signals must have additional dead time to avoid shoot through.

Vcc DC/DC Vcc_out

ACPL-W346

HS_I/P

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived KIT8020-CRD-8FF1217P-1 Datasheet file may be downloaded here without warranties.

Datasheet ID: KIT8020-CRD-8FF1217P-1 507021