2N3811A
2N3811A Datasheet
2N3811 2N3811A
| Part | Datasheet |
|---|---|
2N3811A |
2N3811A (pdf) |
| Related Parts | Information |
|---|---|
|
2N3811 |
2N3811 |
| PDF Datasheet Preview |
|---|
| 2N3811 2N3811A SILICON DUAL PNP TRANSISTORS w. c e n t r a l s e m i c o m DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3811 and 2N3811A are dual silicon PNP transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation One Die Power Dissipation Both Dice Operating and Storage Junction Temperature VCBO VCEO VEBO IC PD TJ, Tstg 60 50 500 600 -65 to +200 UNITS V mA mW °C ELECTRICAL CHARACTERISTICS PER TRANSISTOR TA=25°C unless otherwise noted SYMBOL TEST CONDITIONS UNITS ICBO VCB=50V IEBO VEB=4.0V BVCBO IC=10uA BVCEO IC=10mA BVEBO IE=10uA VCE SAT IC=100uA, IB=10uA VCE SAT IC=1.0mA, IB=100uA VBE SAT IC=100uA, IB=10uA VBE SAT IC=1.0mA, IB=100uA VBE ON VCE=5.0V, IC=100uA VCE=5.0V, IC=1.0uA VCE=5.0V, IC=10uA VCE=5.0V, IC=100uA VCE=5.0V, IC=500uA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=500uA, f=30MHz VCE=5.0V, IC=1.0mA, f=100MHz VCB=5.0V, IE=0, f=100kHz |
| More datasheets: QDS45S220A | QHS12H110A | QASP20M220A | QCS20S110A | QASP5M220AL | QAS120M220A | QDS45S110A | QASP5M220A-L | FJY3009R | 2N3811 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived 2N3811A Datasheet file may be downloaded here without warranties.