2N3811

2N3811 Datasheet


2N3811 2N3811A

Part Datasheet
2N3811 2N3811 2N3811 (pdf)
Related Parts Information
2N3811A 2N3811A 2N3811A
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2N3811 2N3811A

SILICON DUAL PNP TRANSISTORS
w. c e n t r a l s e m i c o m

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3811 and 2N3811A are dual silicon PNP transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.

MARKING FULL PART NUMBER

TO-78 CASE

MAXIMUM RATINGS TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation One Die Power Dissipation Both Dice

Operating and Storage Junction Temperature

VCBO VCEO VEBO

IC PD TJ, Tstg
60 50 500 600 -65 to +200

UNITS V mA
mW °C

ELECTRICAL CHARACTERISTICS PER TRANSISTOR TA=25°C unless otherwise noted

SYMBOL TEST CONDITIONS

UNITS

ICBO

VCB=50V

IEBO

VEB=4.0V

BVCBO

IC=10uA

BVCEO

IC=10mA

BVEBO

IE=10uA

VCE SAT IC=100uA, IB=10uA

VCE SAT IC=1.0mA, IB=100uA

VBE SAT IC=100uA, IB=10uA

VBE SAT IC=1.0mA, IB=100uA

VBE ON

VCE=5.0V, IC=100uA

VCE=5.0V, IC=1.0uA

VCE=5.0V, IC=10uA

VCE=5.0V, IC=100uA

VCE=5.0V, IC=500uA

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=10mA

VCE=5.0V, IC=500uA, f=30MHz

VCE=5.0V, IC=1.0mA, f=100MHz

VCB=5.0V, IE=0, f=100kHz
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Datasheet ID: 2N3811 522764