2N2920A
2N2920A Datasheet
2N2920 2N2920A
| Part | Datasheet |
|---|---|
2N2920A |
2N2920A (pdf) |
| Related Parts | Information |
|---|---|
|
2N2920 |
2N2920 |
| PDF Datasheet Preview |
|---|
| 2N2920 2N2920A SILICON DUAL NPN TRANSISTORS w. c e n t r a l s e m i c o m DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2920 and 2N2920A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation One Die Power Dissipation Both Dice Power Dissipation One Die, TC=25°C Power Dissipation Both Dice, TC=25°C Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg 60 30 300 500 750 -65 to +200 ELECTRICAL CHARACTERISTICS PER TRANSISTOR TA=25°C unless otherwise noted SYMBOL TEST CONDITIONS ICBO VCB=45V ICEO VCE=5.0V IEBO VEB=5.0V BVCBO IC=10uA BVCEO IC=10mA BVEBO IE=10uA VCE SAT IC=1.0mA, IB=100uA VBE ON VCE=5.0V, IC=100uA VCE=5.0V, IC=10uA VCE=5.0V, IC=10uA, TA=-55°C VCE=5.0V, IC=100uA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=500uA, f=20MHz VCB=5.0V, IE=0, f=140kHz VCE=5.0V, IC=10uA, RS=10kΩ, f=1.0kHz, BW=200Hz UNITS V mA mW W °C UNITS nA V MHz pF R1 4-April 2014 2N2920 2N2920A SILICON DUAL NPN TRANSISTORS |
| More datasheets: BXA30-48T05-12-1 | BXA30-24T05-15 | 212P0112N332RA | CCM04-1316 | CCM04-1317 | CCM04-1889LFT R102 | CCM04-1317LFT R701 | CCM04-1316LFT R701 | CCM04-1889 | 2N2920 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived 2N2920A Datasheet file may be downloaded here without warranties.