2N2920

2N2920 Datasheet


2N2920 2N2920A

Part Datasheet
2N2920 2N2920 2N2920 (pdf)
Related Parts Information
2N2920A 2N2920A 2N2920A
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2N2920 2N2920A

SILICON DUAL NPN TRANSISTORS
w. c e n t r a l s e m i c o m

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2920 and 2N2920A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.

MARKING FULL PART NUMBER

TO-78 CASE

MAXIMUM RATINGS TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation One Die Power Dissipation Both Dice Power Dissipation One Die, TC=25°C Power Dissipation Both Dice, TC=25°C Operating and Storage Junction Temperature

SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg
60 30 300 500 750 -65 to +200

ELECTRICAL CHARACTERISTICS PER TRANSISTOR TA=25°C unless otherwise noted

SYMBOL TEST CONDITIONS

ICBO

VCB=45V

ICEO

VCE=5.0V

IEBO

VEB=5.0V

BVCBO

IC=10uA

BVCEO

IC=10mA

BVEBO

IE=10uA

VCE SAT IC=1.0mA, IB=100uA

VBE ON

VCE=5.0V, IC=100uA

VCE=5.0V, IC=10uA

VCE=5.0V, IC=10uA, TA=-55°C

VCE=5.0V, IC=100uA

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=500uA, f=20MHz

VCB=5.0V, IE=0, f=140kHz

VCE=5.0V, IC=10uA, RS=10kΩ,
f=1.0kHz, BW=200Hz

UNITS V mA
mW W °C

UNITS nA V

MHz pF

R1 4-April 2014
2N2920 2N2920A

SILICON DUAL NPN TRANSISTORS
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Datasheet ID: 2N2920 522761