2N2918

2N2918 Datasheet

2N2918

Part	Datasheet
2N2918	2N2918 (pdf)

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2N2918 DUAL SILICON NPN TRANSISTOR w. c e n t r a l s e m i c o m DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2918 is a Dual Silicon NPN Transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation One Die Power Dissipation Both Dice Power Dissipation One Die, TC=25°C Power Dissipation Both Dice, TC=25°C Operating and Storage Junction Temperature VCBO VCEO VEBO IC PD TJ, Tstg 45 30 300 500 750 -65 to +200 ELECTRICAL CHARACTERISTICS TA=25°C unless otherwise noted TEST CONDITIONS ICBO VCB=45V ICEO VCE=5.0V IEBO VEB=5.0V BVCBO IC=10uA BVCEO IC=10mA BVEBO IE=10uA VCE SAT IC=1.0mA, IB=0.1mA VBE ON VCE=5.0V, IC=100uA VCE=5.0V, IC=10uA VCE=5.0V, IC=10uA, VCE=5.0V, IC=100uA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=500uA, f=20MHz VCB=5.0V, IE=0, f=140kHz VCE=5.0V, IC=10uA, RS=10kΩ, f=1.0kHz, BW=200Hz hFE1/hFE2 VCE=5.0V, IC=100uA \|VBE1-VBE2\| VCE=5.0V, IC=10uA \|VBE1-VBE2\| VCE=5.0V, IC=100uA \|VBE1-VBE2\| VCE=5.0V, IC=1.0mA

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2N2918

DUAL SILICON NPN TRANSISTOR
w. c e n t r a l s e m i c o m

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2918 is a Dual Silicon NPN Transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.

MARKING FULL PART NUMBER

TO-78 CASE

MAXIMUM RATINGS TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation One Die Power Dissipation Both Dice Power Dissipation One Die, TC=25°C Power Dissipation Both Dice, TC=25°C Operating and Storage Junction Temperature

VCBO VCEO VEBO

IC PD TJ, Tstg
45 30 300 500 750 -65 to +200

ELECTRICAL CHARACTERISTICS TA=25°C unless otherwise noted

TEST CONDITIONS

ICBO

VCB=45V

ICEO

VCE=5.0V

IEBO

VEB=5.0V

BVCBO

IC=10uA

BVCEO

IC=10mA

BVEBO

IE=10uA

VCE SAT

IC=1.0mA, IB=0.1mA

VBE ON

VCE=5.0V, IC=100uA

VCE=5.0V, IC=10uA

VCE=5.0V, IC=10uA,

VCE=5.0V, IC=100uA

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=500uA, f=20MHz

VCB=5.0V, IE=0, f=140kHz

VCE=5.0V, IC=10uA, RS=10kΩ,
f=1.0kHz, BW=200Hz
hFE1/hFE2

VCE=5.0V, IC=100uA
|VBE1-VBE2| VCE=5.0V, IC=10uA
|VBE1-VBE2| VCE=5.0V, IC=100uA
|VBE1-VBE2| VCE=5.0V, IC=1.0mA

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Datasheet ID: 2N2918 522760