2N2060M
2N2060M Datasheet
2N2060M
| Part | Datasheet |
|---|---|
2N2060M |
2N2060M (pdf) |
| PDF Datasheet Preview |
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| 2N2060M SILICON DUAL NPN TRANSISTOR w. c e n t r a l s e m i c o m DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2060M is a silicon dual NPN transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS TA=25°C unless otherwise noted SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCER Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current Power Dissipation One Die Power Dissipation Both Dice Power Dissipation One Die, TC=25°C Power Dissipation Both Dice, TC=25°C Operating and Storage Junction Temperature TJ, Tstg 100 80 60 500 600 -65 to +200 UNITS V mA mW W °C ELECTRICAL CHARACTERISTICS PER TRANSISTOR TA=25°C unless otherwise noted SYMBOL TEST CONDITIONS ICBO VCB=80V IEBO VEB=5.0V BVCBO IC=100uA BVCER IC=10mA, RBE=10Ω BVCEO IC=30mA BVEBO IE=100uA VCE SAT IC=50mA, IB=5.0mA VBE SAT IC=50mA, IB=5.0mA |
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