FDMC6683PZ

FDMC6683PZ Datasheet

FDMC6683PZ P-Channel MOSFET

Part	Datasheet
FDMC6683PZ	FDMC6683PZ (pdf)

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FDMC6683PZ P-Channel MOSFET FDMC6683PZ P-Channel MOSFET -20 V, -14 A, mΩ September 2013 - Max rDS on = mΩ at VGS = V, ID = -14 A - Max rDS on = 13 mΩ at VGS = V, ID = -11 A - High performance trench technology for extremely low rDS on - High power and current handling capability in a widely used surface mount package - Termination is Lead-free and RoHS Compliant - HBM ESD capability level > KV typical Note 4 This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced process that has been optimized for rDS ON , switching performance and ruggedness. - Battery Management - Load Switch 8765 Pin 1 1 234 G S Pin 1 Bottom MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 3 Note 1a Ratings -20 ±12 -40 -14 -50 38 26 -55 to +150 Units V mJ W °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a °C/W Device Marking 22BK Device FDMC6683PZ Package MLP 3.3X3.3 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units 2013 Fairchild Semiconductor Corporation FDMC6683PZ P-Channel MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250 uA, VGS = 0 V ID = -250 uA, referenced to 25 °C VDS = -16 V, VGS = 0 V VGS = ±12 V, VDS = 0 V mV/°C ±10 On Characteristics VGS th Gate to Source Threshold Voltage VGS = VDS, ID = -250 uA Gate to Source Threshold Voltage Temperature Coefficient ID = -250 uA, referenced to 25 °C mV/°C VGS = V, ID = -14 A rDS on Static Drain to Source On Resistance VGS = V, ID = -11 A VGS = V, ID = -14 A, TJ = 125 °C Forward Transconductance VDS = -5 V, ID = -14 A Dynamic Characteristics Ciss Coss Crss VDS = -10 V, VGS = 0 V, f = 1 MHz 5710 7995

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FDMC6683PZ P-Channel MOSFET

FDMC6683PZ

P-Channel MOSFET
-20 V, -14 A, mΩ

September 2013
- Max rDS on = mΩ at VGS = V, ID = -14 A - Max rDS on = 13 mΩ at VGS = V, ID = -11 A - High performance trench technology for extremely low rDS on - High power and current handling capability in a widely used
surface mount package
- Termination is Lead-free and RoHS Compliant
- HBM ESD capability level > KV typical Note 4

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced process that has been optimized for rDS ON , switching performance and ruggedness.
- Battery Management - Load Switch
8765

Pin 1
1 234

G S Pin 1

Bottom

MLP 3.3x3.3

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Symbol VDS VGS

EAS PD TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous -Continuous -Pulsed

TC = 25 °C TA = 25 °C

Single Pulse Avalanche Energy

Power Dissipation

TC = 25 °C

Power Dissipation

TA = 25 °C

Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a Note 3

Note 1a

Ratings -20 ±12 -40 -14 -50 38 26
-55 to +150

Units V
mJ W °C

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Note 1a
°C/W

Device Marking 22BK

Device FDMC6683PZ

Package MLP 3.3X3.3

Reel Size 13 ’’

Tape Width 12 mm

Quantity 3000 units
2013 Fairchild Semiconductor Corporation

FDMC6683PZ P-Channel MOSFET

Electrical Characteristics TJ = 25 °C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

IGSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = -250 uA, VGS = 0 V ID = -250 uA, referenced to 25 °C

VDS = -16 V, VGS = 0 V VGS = ±12 V, VDS = 0 V
mV/°C
±10

On Characteristics

VGS th

Gate to Source Threshold Voltage

VGS = VDS, ID = -250 uA

Gate to Source Threshold Voltage Temperature Coefficient

ID = -250 uA, referenced to 25 °C
mV/°C

VGS = V, ID = -14 A
rDS on

Static Drain to Source On Resistance VGS = V, ID = -11 A

VGS = V, ID = -14 A, TJ = 125 °C

Forward Transconductance

VDS = -5 V, ID = -14 A

Dynamic Characteristics

Ciss Coss Crss

VDS = -10 V, VGS = 0 V, f = 1 MHz
5710 7995

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Datasheet ID: FDMC6683PZ 514199