BSS79C
BSS79C Datasheet
BSS79C
| Part | Datasheet |
|---|---|
BSS79C |
BSS79C (pdf) |
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| BSS79C BSS79C NPN General Purpose Amplifier • This device is for use as a medium power amplifier and swith requiring collector currents up to 500mA. • Sourced from process • See BCW65C for characteristics. Absolute Maximum Ratings * Ta=25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Min. Off Characteristics V BR CEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 V BR CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 V BR EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 ICBO Collector-Cutoff Current VCB = 60V VCB = 60V, Ta = 150°C IEBO Emitter-Cutoff Current VEB = 3.0V, IC = 0 On Characteristics * DC Current Gain IC = 150mA, VCE = 10V |
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