MSA-0436-TR1G

MSA-0436-TR1G Datasheet

MSA-0436

Part	Datasheet
MSA-0436-TR1G	MSA-0436-TR1G (pdf)

Related Parts	Information
MSA-0436-BLKG	MSA-0436-BLKG

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MSA-0436 Cascadable Silicon Bipolar MMIC Amplifiers Data Sheet The MSA-0436 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. • Cascadable Gain Block • 3 dB Bandwidth DC to GHz • dBm Typical P1 dB at GHz • dB Typical Gain at GHz • Unconditionally Stable k>1 • Cost Effective Ceramic Microstrip Package 36 micro-X Package Typical Biasing Configuration R bias VCC > 7 V C block IN 3 1 MSA RFC Optional C block Vd = V MSA-0436 Absolute Maximum Ratings Parameter Absolute Maximum[1] Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature[4] 100 mA 650 mW +13 dBm 150°C to 150°C Permanent damage may occur if any of these limits are exceeded. TCASE = 25°C. Derate at mW/°C for TC > 109°C. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. The small spot size of this technique results in a higher, though more accurate determination of qjc than do alternate methods. Thermal Resistance[2,5] = 140°C/W Electrical Specifications[1], TA = 25°C Parameters and Test Conditions Id = 50 mA, ZO = 50 Power Gain \|S21\| 2 f = GHz Gain Flatness f = to GHz f3 dB 3 dB Bandwidth VSWR Input VSWR Output VSWR f = to GHz f = to GHz 50 Noise Figure f = GHz P1 dB Output Power at 1 dB Gain Compression f = GHz Third Order Intercept Point f = GHz Ordering Information Part Numbers No. of Devices MSA-0436-BLKG MSA-0436-TR1G 1000 Comments Bulk 7" Reel G p dB MSA-0436 Typical Scattering Parameters ZO = 50 TA = 25°C, Id = 50 mA Freq. Typical Performance, 25°C unless otherwise noted 8 Gain Flat to DC FREQUENCY GHz Figure Typical Power Gain vs. Frequency, TA = 25°C, Id = 50 mA. Id mA 80 TC = +125°C TC = +25°C 60 TC = Figure Device Current vs. Voltage. P1 dB dBm Gp dB 12 P1 dB +125 TEMPERATURE, °C Figure Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = GHz, Id = 50 mA. NF dB P1 dB dBm 18 Id = 70 mA 12 Id = 50 mA 9 6 Id = 30 mA FREQUENCY GHz Figure Output Power at 1 dB Gain Compression vs. Frequency. NF dB G p dB 4 20 30 40 50 60 70 I d mA Figure Power Gain vs. Current. Id = 30 mA Id = 50 mA Id = 70 mA FREQUENCY GHz

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MSA-0436

Cascadable Silicon Bipolar MMIC Amplifiers

Data Sheet

The MSA-0436 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications.

The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
• Cascadable Gain Block
• 3 dB Bandwidth DC to GHz
• dBm Typical P1 dB at GHz
• dB Typical Gain at GHz
• Unconditionally Stable k>1
• Cost Effective Ceramic Microstrip Package
36 micro-X Package

Typical Biasing Configuration

R bias

VCC > 7 V

C block IN
3 1 MSA

RFC Optional

C block Vd = V

MSA-0436 Absolute Maximum Ratings

Parameter

Absolute Maximum[1]

Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature[4]
100 mA 650 mW +13 dBm 150°C to 150°C

Permanent damage may occur if any of these limits are exceeded. TCASE = 25°C. Derate at mW/°C for TC > 109°C. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.

The small spot size of this technique results in a higher, though more
accurate determination of qjc than do alternate methods.

Thermal Resistance[2,5] = 140°C/W

Electrical Specifications[1], TA = 25°C

Parameters and Test Conditions Id = 50 mA, ZO = 50

Power Gain |S21| 2
f = GHz

Gain Flatness
f = to GHz
f3 dB
3 dB Bandwidth

VSWR

Input VSWR Output VSWR
f = to GHz f = to GHz
50 Noise Figure
f = GHz

P1 dB Output Power at 1 dB Gain Compression
f = GHz

Third Order Intercept Point
f = GHz
Ordering Information

Part Numbers No. of Devices

MSA-0436-BLKG

MSA-0436-TR1G
1000

Comments Bulk 7" Reel

G p dB

MSA-0436 Typical Scattering Parameters ZO = 50 TA = 25°C, Id = 50 mA

Freq.

Typical

Performance,
25°C
unless otherwise noted
8 Gain Flat to DC

FREQUENCY GHz

Figure Typical Power Gain vs. Frequency, TA = 25°C, Id = 50 mA.

Id mA
80 TC = +125°C TC = +25°C
60 TC =

Figure Device Current vs. Voltage.

P1 dB dBm

Gp dB
12 P1 dB
+125

TEMPERATURE, °C

Figure Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = GHz, Id = 50 mA.

NF dB P1 dB dBm
18 Id = 70 mA
12 Id = 50 mA
9 6 Id = 30 mA

FREQUENCY GHz

Figure Output Power at 1 dB Gain Compression vs. Frequency.

NF dB

G p dB
4 20 30 40 50 60 70

I d mA

Figure Power Gain vs. Current.

Id = 30 mA

Id = 50 mA

Id = 70 mA

FREQUENCY GHz

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Datasheet ID: MSA-0436-TR1G 520463