FJNS3208RTA
FJNS3208RTA Datasheet
FJNS3208R
| Part | Datasheet |
|---|---|
FJNS3208RTA |
FJNS3208RTA (pdf) |
| Related Parts | Information |
|---|---|
FJNS3208RBU |
FJNS3208RBU |
| PDF Datasheet Preview |
|---|
| FJNS3208R FJNS3208R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJNS4208R TO-92S 1.Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -55 ~ 150 Equivalent Circuit Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC=10µA, IE=0 IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA IC=10mA, IB=0.5mA VCB=10V, IE=0 f=1.0MHz VI off VI on R1/R2 Input Off Voltage Input On Voltage Input Resistor Ratio VCE=5V, IC=100µA VCE=0.3V, IC=2mA Min. 50 56 Typ. Max. Units V µA V MHz pF V 2002 Fairchild Semiconductor Corporation FJNS3208R Typical Characteristics 1000 100 VCE = 5V R1 = 47K R2 = 22K hFE, DC CURRENT GAIN IC [µA], COLLECTOR CURRENT 1000 IC[mA], COLLECTOR CURRENT Figure DC current Gain VCE = 5V 1000 |
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