AT-64020

AT-64020 Datasheet

AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor

Part	Datasheet
AT-64020	AT-64020 (pdf)

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AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is for use in medium power, wide band amplifier and oscillator applications operating over VHF, UHF and microwave frequencies. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metallization in the fabrication of these devices. The use of ion-implanted ballast resistors ensures uniform current distribution through the multiple emitter fingers. • High Output Power dBm Typical P1 dB at GHz dBm Typical P1 dB at GHz • High Gain at 1 dB Compression dB Typical G1 dB at GHz dB Typical G1 dB at GHz • 35% Total Efficiency • Emitter Ballast Resistors • Hermetic, Metal/Beryllia Package 200 mil BeO Package AT-64020 Absolute Maximum Ratings Parameter Units Absolute Maximum[1] VEBO Emitter-Base Voltage VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage Collector Current Power Dissipation [2,3] mA 200 Junction Temperature °C 200 TSTG Storage Temperature -65 to 200 Thermal Resistance [2,4]: = 40°C/W Notes Permanent damage may occur if any of these limits are exceeded. Tcase = 25°C. Derate at 25 mW/°C for Tc > 80°C. The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Parameters and Test Conditions[1] Units Min. Typ. Max. \|S21E\|2 Insertion Power Gain VCE = 16 V, IC = 110 mA f = GHz Ordering Information Part Number AT-64020 No. of Devices 100 200 mil BeO Package Dimensions EMITTER 45° BASE NO REFERENCE EMITTER COLLECTOR unless otherwise specified Dimensions are in Tolerances in .xxx = ± mm .xx = ± Base of package is electrically isolated. ± ± For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 2008 Avago Technologies Limited. All rights reserved. Obsoletes 5989-2657EN AV02-1220EN May 5, 2008

PDF Datasheet Preview

AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor

Data Sheet

The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is for use in medium power, wide band amplifier and oscillator applications operating over VHF, UHF and microwave frequencies.

Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metallization in the fabrication of these devices. The use of ion-implanted ballast resistors ensures uniform current distribution through the multiple emitter fingers.
• High Output Power dBm Typical P1 dB at GHz dBm Typical P1 dB at GHz
• High Gain at 1 dB Compression dB Typical G1 dB at GHz dB Typical G1 dB at GHz
• 35% Total Efficiency
• Emitter Ballast Resistors
• Hermetic, Metal/Beryllia Package
200 mil BeO Package

AT-64020 Absolute Maximum Ratings

Parameter

Units

Absolute Maximum[1]

VEBO

Emitter-Base Voltage

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

Collector Current

Power Dissipation [2,3]
mA 200

Junction Temperature
°C 200

TSTG

Storage Temperature
-65 to 200

Thermal Resistance [2,4]:
= 40°C/W

Notes Permanent damage may occur if any of
these limits are exceeded. Tcase = 25°C. Derate at 25 mW/°C for Tc > 80°C. The small spot size of this technique results
in a higher, though more accurate determination of than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.

Electrical Specifications, TA = 25°C

Parameters and Test Conditions[1]

Units

Min.

Typ.

Max.
|S21E|2 Insertion Power Gain VCE = 16 V, IC = 110 mA
f = GHz
Ordering Information

Part Number AT-64020

No. of Devices 100
200 mil BeO Package Dimensions

EMITTER
45°

BASE

NO REFERENCE

EMITTER

COLLECTOR
unless otherwise specified

Dimensions are in

Tolerances
in .xxx = ±
mm .xx = ±

Base of package is
electrically isolated.
± ±

For product information and a complete list of distributors, please go to our web site:

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 2008 Avago Technologies Limited. All rights reserved. Obsoletes 5989-2657EN AV02-1220EN May 5, 2008

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AT-64020 Datasheet file may be downloaded here without warranties.

Datasheet ID: AT-64020 520192