VTP413H
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VTP413H (pdf) |
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VTP413H VTP Process Silicon Photodiode DATASHEET Photon Detection That photodiode has excellent response in the near IR and has a built-in visible blocking filter, making it suitable for applications where ambient light needs to be rejected. Key Features • Low dark current • Low capacitance • High shunt resistance • Built-in visible rejection filter • Plastic lensed package • RoHS-compliant Applications • Smoke detection • Near IR light detection Page 1 of 5 VTP413H-Rev.1-2013.01.11 VTP413H VTP Process Silicon Photodiode General Characteristics and Electro-optical specifications at 25°C Parameter Typical Active area Storage Temperature Operating Temperature Short Circuit Current Short Circuit Current Temperature Coefficient Open Circuit Voltage Open Circuit Voltage Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Spectral Range Peak Spectral Response Sensitivity at peak Breakdown Voltage Angular Response Noise Equivalent Power ±48 2.3X10-14 Max 100 20 50 1150 Units mm2 °C °C µA %/°C mV/°C nA pF nm A/W V ° Conditions 100fc, 2850K color temperature 2850K color temperature 100fc, 2850K color temperature 2850K color temperature -10V Bias 0fc, 10mV bias 0fc, -3V Bias At 50% response |
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