VTP413H

VTP413H Datasheet


VTP413H

Part Datasheet
VTP413H VTP413H VTP413H (pdf)
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VTP413H

VTP Process Silicon Photodiode

DATASHEET

Photon Detection

That photodiode has excellent response in the near IR and has a built-in visible blocking filter, making it suitable for applications where ambient light needs to be rejected.

Key Features
• Low dark current
• Low capacitance
• High shunt resistance
• Built-in visible rejection filter
• Plastic lensed package
• RoHS-compliant

Applications
• Smoke detection
• Near IR light detection

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VTP413H-Rev.1-2013.01.11

VTP413H

VTP Process Silicon Photodiode

General Characteristics and Electro-optical specifications at 25°C

Parameter

Typical

Active area

Storage Temperature

Operating Temperature

Short Circuit Current

Short Circuit Current Temperature Coefficient

Open Circuit Voltage

Open Circuit Voltage Temperature Coefficient

Dark Current

Shunt Resistance

Junction Capacitance

Spectral Range

Peak Spectral Response

Sensitivity at peak

Breakdown Voltage

Angular Response Noise Equivalent Power
±48 2.3X10-14

Max 100
20 50 1150

Units mm2
°C °C µA
%/°C
mV/°C
nA pF nm A/W V °

Conditions
100fc, 2850K color temperature 2850K color temperature 100fc, 2850K color temperature 2850K color temperature -10V Bias 0fc, 10mV bias 0fc, -3V Bias

At 50% response
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Datasheet ID: VTP413H 512952