AO4801AL_001
AO4801AL_001 Datasheet
AO4801AL
| Part | Datasheet |
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AO4801AL_001 |
AO4801AL_001 (pdf) |
| Related Parts | Information |
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AO4801AL |
AO4801AL |
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| AO4801AL 30V Dual P-Channel MOSFET Product Summary The AO4801AL combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is suitable for use as a load switch or in PWM applications. VDS ID at VGS=-10V RDS ON at VGS=-10V RDS ON at VGS = -4.5V RDS ON at VGS = -2.5V 100% UIS Tested 100% Rg Tested -30V -5.6A < < < SOIC-8 SOIC-8 Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.3mH C IDSM IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG 10 Sec Steady State -30 ±12 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 48 74 Maximum Junction-to-Lead Steady-State Max 90 40 |
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