BU426-S

BU426-S Datasheet

BU426, BU426A NPN SILICON POWER TRANSISTORS

Part	Datasheet
BU426-S	BU426-S (pdf)

Related Parts	Information
BU426A-S	BU426A-S

PDF Datasheet Preview
BU426, BU426A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 900 Volt Blocking Capability SOT-93 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING BU426 OBSOLETE Collector-base voltage IE = 0 Collector-emitter voltage VBE = 0 Collector-emitter voltage IB = 0 Continuous collector current Peak collector current see Note 1 Continuous base current Peak base current see Note 1 Continuous device dissipation at or below 50°C case temperature Operating junction temperature range Storage temperature range NOTE 1 This value applies for tp 2 ms, duty cycle BU426A BU426 BU426A BU426 BU426A VCBO VCES VCEO IC ICM IB IBM Ptot Tj Tstg VALUE 800 900 800 900 375 400 6 10 +2, ±3 70 -65 to +150 -65 to +150 UNIT A W °C °C PRODUCT INFORMATION BU426, BU426A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Collector-emitter BU426 VCEO sus sustaining voltage IC = 100 mA L = 25 mH see Note 2 BU426A Collector-emitter ICES cut-off current IEBO Emitter cut-off current VCE = 800 V VCE = 900 V VCE = 800 V VCE = 900 V VEB = 10 V VBE = 0 VBE = 0 VBE = 0 VBE = 0

PDF Datasheet Preview

BU426, BU426A NPN SILICON POWER TRANSISTORS
● Rugged Triple-Diffused Planar Construction ● 900 Volt Blocking Capability

SOT-93 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDTRAAA
absolute maximum ratings at 25°C case temperature unless otherwise noted

RATING

BU426

OBSOLETE Collector-base voltage IE = 0

Collector-emitter voltage VBE = 0

Collector-emitter voltage IB = 0

Continuous collector current Peak collector current see Note 1 Continuous base current Peak base current see Note 1 Continuous device dissipation at or below 50°C case temperature Operating junction temperature range Storage temperature range

NOTE 1 This value applies for tp 2 ms, duty cycle

BU426A BU426 BU426A BU426 BU426A

VCBO

VCES

VCEO

IC ICM IB IBM Ptot Tj Tstg

VALUE
800 900 800 900 375 400
6 10 +2, ±3 70 -65 to +150 -65 to +150

UNIT

A W °C °C

PRODUCT INFORMATION

BU426, BU426A NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-emitter

BU426

VCEO sus sustaining voltage

IC = 100 mA L = 25 mH
see Note 2

BU426A

Collector-emitter ICES cut-off current

IEBO

Emitter cut-off current

VCE = 800 V VCE = 900 V VCE = 800 V VCE = 900 V

VEB = 10 V

VBE = 0 VBE = 0 VBE = 0 VBE = 0

More datasheets: PTCTZ3NR949ETE | BD239C-S | BD239B-S | BD239A-S | BD239-S | 74F569PC | 74F569SC | 74F382PC | 17801-T01 | BU426A-S

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Datasheet ID: BU426-S 522143