BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS
Part | Datasheet |
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BD239B-S (pdf) |
Related Parts | Information |
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BD239C-S |
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BD239A-S |
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BD239-S |
PDF Datasheet Preview |
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BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD240 Series 30 W at 25°C Case Temperature 2 A Continuous Collector Current 4 A Peak Collector Current Customer-Specified Selections Available This series is recommended for new designs. TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING BD239 OBSOLETE Collector-emitter voltage RBE = 100 Collector-emitter voltage IC = 30 mA Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Unclamped inductive load energy see Note 4 Operating junction temperature range Storage temperature range BD239A BD239B BD239C BD239 BD239A BD239B BD239C VCER VCEO VEBO IC ICM IB Ptot Tj Tstg Lead temperature mm from case for 10 seconds VALUE 55 70 90 115 45 60 80 100 5 2 4 30 2 32 -65 to +150 -65 to +150 250 UNIT V A W mJ °C °C °C NOTES This value applies for tp ms, duty cycle Derate linearly to 150°C case temperature at the rate of W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of L = 20 mH, IB on = A, RBE = 100 VBE off = 0, RS = VCC = 20 V. BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX BD239 Collector-emitter V BR CEO breakdown voltage IC = 30 mA see Note 5 IB = 0 BD239A BD239B BD239C VCE = 55 V VBE = 0 BD239 Collector-emitter ICES cut-off current VCE = 70 V VCE = 90 V VBE = 0 VBE = 0 |
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