BLF7G22L-200,112
BLF7G22L-200,112 Datasheet
BLF7G22L-200 BLF7G22LS-200
| Part | Datasheet |
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BLF7G22L-200,112 |
BLF7G22L-200,112 (pdf) |
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BLF7G22L-200,118 |
BLF7G22L-200,118 |
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| BLF7G22L-200 BLF7G22LS-200 Power LDMOS transistor Product profile 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation VDS PL AV Gp ACPR mA V W 2-carrier W-CDMA 2110 to 2170 1620 28 55 [1] Test signal 3GPP test model 1 64 DPCH PAR = dB at % probability on CCDF carrier spacing 5 MHz. Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2110 MHz to 2170 MHz frequency range BLF7G22L-200 BLF7G22LS-200 Power LDMOS transistor Pinning information Table Pinning BLF7G22L-200 SOT502A drain gate source BLF7G22LS-200 SOT502B drain gate source [1] Connected to flange. Ordering information Simplified outline Graphic symbol sym112 3 [1] sym112 Table Ordering information Type number Package Name Description BLF7G22L-200 - flanged LDMOST ceramic package 2 mounting holes 2 leads BLF7G22LS-200 - earless flanged LDMOST ceramic package 2 leads Version SOT502A SOT502B Limiting values Table Limiting values In accordance with the Absolute Maximum Rating System IEC Symbol Parameter Conditions drain-source voltage gate-source voltage Tstg storage temperature junction temperature Thermal characteristics Min Max Unit +13 V +150 C 200 C Table Thermal characteristics Symbol Parameter Rth j-c thermal resistance from junction to case Conditions Tcase = 80 C PL = 80 W CW VDS = 28 V IDq = 1620 mA Typ Unit K/W BLF7G22L-200_7G22LS-200#5 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. All rights reserved. 2 of 13 BLF7G22L-200 BLF7G22LS-200 Power LDMOS transistor Characteristics Table Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions V BR DSS drain-source breakdown voltage VGS = 0 V ID = mA 65 VGS th IDSS IDSX gate-source threshold voltage drain leakage current drain cut-off current IGSS Ordering information 2 Limiting values. 2 Thermal characteristics 2 Characteristics 3 Test information 3 Ruggedness in class-AB operation 3 Impedance information 4 1 Tone CW 4 1-carrier W-CDMA 5 2-carrier W-CDMA 6 Test circuit. 7 Package outline 8 Handling information. 10 Abbreviations 10 Legal information. 11 Data sheet status 11 Definitions 11 Disclaimers 11 Trademarks. 12 Contact information. 12 Contents 13 Please be aware that important notices concerning this document and the product s described herein, have been included in section ‘Legal information’. Ampleon The Netherlands B.V. All rights reserved. For more information, please visit For sales office addresses, please visit: Date of release 1 September 2015 Document identifier BLF7G22L-200_7G22LS-200#5 |
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