MSA-0370

MSA-0370 Datasheet

Agilent MSA-0370 Cascadable Silicon Bipolar MMIC Amplifiers

Part	Datasheet
MSA-0370	MSA-0370 (pdf)

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Agilent MSA-0370 Cascadable Silicon Bipolar MMIC Amplifiers Data Sheet The MSA-0370 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. 70 mil Package • Cascadable 50 Gain Block • 3 dB Bandwidth DC to GHz • dB Typical Gain at GHz • dBm Typical P1dB at GHz • Unconditionally Stable k>1 • Hermetic Gold-ceramic Microstrip Package The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration R bias VCC > 7 V C block IN 3 1 MSA RFC Optional C block Vd = 5 V MSA-0370 Absolute Maximum Ratings Parameter Absolute Maximum[1] Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature 80 mA 425 mW +13 dBm 200°C to 200°C Notes Permanent damage may occur if any of these limits are exceeded. TCASE = 25°C. Derate at 8 mW/°C for TC > 147°C. The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods. Thermal Resistance[2,4] = 125°C/W Electrical Specifications[1], TA = 25°C Parameters and Test Conditions Id = 35 mA, ZO = 50 Power Gain \|S21\| 2 Gain Flatness f = GHz f = to GHz f3 dB 3 dB Bandwidth VSWR Input VSWR Output VSWR f = to GHz f = to GHz 50 Noise Figure f = GHz P1 dB Output Power at 1 dB Gain Compression f = GHz Ordering Information Part Numbers No. of Devices MSA-0370 Comments Bulk 70 mil Package Dimensions GROUND RF INPUT RF OUTPUT AND BIAS ± ± 2 GROUND unless otherwise specified Dimensions are in Tolerances in .xxx = ± mm .xx = ± For product information and a complete list of distributors, please go to our web site. For technical assistance call Americas/Canada +1 800 235-0312 or 916 788-6763 Europe +49 0 6441 92460 China 10800 650 0017 Hong Kong 65 6756 2394 India, Australia, New Zealand 65 6755 1939 Japan +81 3 3335-8152 Domestic/International , or 0120-61-1280 Domestic Only Korea 65 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia 65 6755 2044 Taiwan 65 6755 1843 Data subject to change. Copyright 2005 Agilent Technologies, Inc. Obsoletes 5966-4953E April 4, 2005 5989-2765EN

PDF Datasheet Preview

Agilent MSA-0370 Cascadable Silicon Bipolar MMIC Amplifiers

Data Sheet

The MSA-0370 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications.
70 mil Package
• Cascadable 50 Gain Block
• 3 dB Bandwidth DC to GHz
• dB Typical Gain at GHz
• dBm Typical P1dB at GHz
• Unconditionally Stable k>1
• Hermetic Gold-ceramic Microstrip Package

The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

Typical Biasing Configuration

R bias

VCC > 7 V

C block IN
3 1 MSA

RFC Optional

C block Vd = 5 V

MSA-0370 Absolute Maximum Ratings

Parameter

Absolute Maximum[1]

Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature
80 mA 425 mW +13 dBm 200°C to 200°C

Notes Permanent damage may occur if any of these limits are exceeded.

TCASE = 25°C. Derate at 8 mW/°C for TC > 147°C. The small spot size of this technique results in a higher, though more
accurate determination of than do alternate methods.

Thermal Resistance[2,4] = 125°C/W

Electrical Specifications[1], TA = 25°C

Parameters and Test Conditions Id = 35 mA, ZO = 50

Power Gain |S21| 2

Gain Flatness
f = GHz f = to GHz
f3 dB
3 dB Bandwidth

VSWR

Input VSWR Output VSWR
f = to GHz f = to GHz
50 Noise Figure
f = GHz

P1 dB Output Power at 1 dB Gain Compression
f = GHz
Ordering Information

Part Numbers No. of Devices

MSA-0370

Comments Bulk
70 mil Package Dimensions

GROUND

RF INPUT

RF OUTPUT AND BIAS
± ±
2 GROUND
unless otherwise specified

Dimensions are in

Tolerances
in .xxx = ±
mm .xx = ±

For product information and a complete list of distributors, please go to our web site.

For technical assistance call Americas/Canada +1 800 235-0312 or 916 788-6763

Europe +49 0 6441 92460 China 10800 650 0017

Hong Kong 65 6756 2394

India, Australia, New Zealand 65 6755 1939

Japan +81 3 3335-8152 Domestic/International , or 0120-61-1280 Domestic Only

Korea 65 6755 1989

Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia 65 6755 2044

Taiwan 65 6755 1843

Data subject to change. Copyright 2005 Agilent Technologies, Inc. Obsoletes 5966-4953E April 4, 2005 5989-2765EN

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Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MSA-0370 Datasheet file may be downloaded here without warranties.

Datasheet ID: MSA-0370 520460