FGPF7N60LSDTU

FGPF7N60LSDTU Datasheet

FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK

Part	Datasheet
FGPF7N60LSDTU	FGPF7N60LSDTU (pdf)

PDF Datasheet Preview
FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK January 2006 FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK • Low saturation voltage VCE sat = V IC = 7A • High input impedance • CO-PAK, IGBT with FRD trr = 50 ns typ. Lamp applications Hallogen Dimmer Fairchild's Insulated Gate Bipolar Transistors IGBTs provides very low conduction and switching losses.The device is designed for Lamp applications where very low On-Voltage Drop is a required feature. TO-220F 1.Gate 2.Collector 3.Emitter Absolute Maximum Ratings VCES VGES IC ICM 1 IF I FM Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continous Forward Current Diode Maximum Forward Current TC = 25°C TC = 100°C TC = 100°C Maximum Power Dissipation TC = 25°C Maximum Power Dissipation TC = 100°C Operating Junction Temperature Tstg Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter IGBT Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient PCB Mount 2 Notes 2 Mounted on 1” squre PCB FR4 or G-10 Material FGPF7N60LSD 600 ± 20 14 7 21 12 60 45 18 -55 to +150 -55 to +150 300 Typ. ---- Max. 2006 Fairchild Semiconductor Corporation Units V A W °C °C °C Units °C/W °C/W °C/W FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK Package Marking and Ordering Information Device Marking Device FGPF7N60LSD FGPF7N60LSDTU Package TO-220F Packaging Type Rail /Tube Qty per Tube 50ea Max Qty per Box 1,000ea Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown] Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE th VCE sat G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 7mA, VCE = VGE IC = 7A, VGE = 15V IC = 7A, VGE = 15V, TC = 125°C IC = 14 A, VGE = 15V VCE = 30V, VGE = 0V, f = 1MHz V/°C ± 100 Switching Characteristics td on Turn-On Delay Time Rise Time

PDF Datasheet Preview

FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK

January 2006

FGPF7N60LSD
600V, 7A Low Saturation IGBT CO-PAK
• Low saturation voltage VCE sat = V IC = 7A
• High input impedance
• CO-PAK, IGBT with FRD trr = 50 ns typ.

Lamp applications Hallogen Dimmer

Fairchild's Insulated Gate Bipolar Transistors IGBTs provides very low conduction and switching losses.The device is designed for Lamp applications where very low On-Voltage Drop is a required feature.

TO-220F 1.Gate 2.Collector 3.Emitter

Absolute Maximum Ratings

VCES VGES IC

ICM 1 IF I FM

Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continous Forward Current Diode Maximum Forward Current

TC = 25°C TC = 100°C

TC = 100°C

Maximum Power Dissipation

TC = 25°C

Maximum Power Dissipation

TC = 100°C

Operating Junction Temperature

Tstg

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

Thermal Characteristics

Parameter

IGBT Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient PCB Mount 2

Notes 2 Mounted on 1” squre PCB FR4 or G-10 Material

FGPF7N60LSD
600 ± 20 14
7 21 12 60 45 18 -55 to +150 -55 to +150 300

Typ.
----

Max.
2006 Fairchild Semiconductor Corporation

Units

V A W °C °C °C

Units
°C/W °C/W °C/W

FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK
Package Marking and Ordering Information

Device Marking

Device

FGPF7N60LSD FGPF7N60LSDTU

Package

TO-220F

Packaging Type

Rail /Tube

Qty per Tube
50ea

Max Qty per Box
1,000ea

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min. Typ. Max. Units

Off Characteristics

BVCES

ICES

IGES

Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown] Voltage Collector Cut-Off Current G-E Leakage Current

On Characteristics

VGE th VCE sat

G-E Threshold Voltage

Collector to Emitter Saturation Voltage

Dynamic Characteristics

Cies

Input Capacitance

Coes

Output Capacitance

Cres

VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA

VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

IC = 7mA, VCE = VGE IC = 7A, VGE = 15V IC = 7A, VGE = 15V, TC = 125°C IC = 14 A, VGE = 15V

VCE = 30V, VGE = 0V, f = 1MHz

V/°C
± 100

Switching Characteristics
td on

Turn-On Delay Time

Rise Time

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FGPF7N60LSDTU Datasheet file may be downloaded here without warranties.

Datasheet ID: FGPF7N60LSDTU 514648