FQD3N60 / FQU3N60
Part | Datasheet |
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FQD3N60TM (pdf) |
Related Parts | Information |
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FQD3N60TF |
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FQU3N60TU |
PDF Datasheet Preview |
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FQD3N60 / FQU3N60 FQD3N60 / FQU3N60 600V N-Channel MOSFET April 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. • 2.4A, 600V, RDS on = = 10 V • Low gate charge typical 10 nC • Low Crss typical pF • Fast switching • 100% avalanche tested • Improved dv/dt capability D-PAK FQD Series I-PAK FQU Series Absolute Maximum TC = 25°C unless otherwise noted Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, case for 5 seconds FQD3N60 / FQU3N60 600 200 50 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount |
More datasheets: FIT0292-SB | 94817 | 94800 | W1G200-EA95-68 | 18062TT | FQB30N06TM | M213302 SL002 | M213302 SL005 | M213302 SL001 | AS5011 DB EASYPOINT |
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