AON6444L
AON6444L Datasheet
AON6444L
| Part | Datasheet |
|---|---|
AON6444L |
AON6444L (pdf) |
| PDF Datasheet Preview |
|---|
| AON6444L 60V N-Channel MOSFET SDMOS TM Product Summary The AON6444L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V 100% UIS Tested 100% Rg Tested 60V 81A < < Top View DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 81 51 170 14 11 58 168 83 33 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 14 40 Maximum Junction-to-Case Steady-State Max 17 55 Units V A A mJ W °C Units °C/W °C/W °C/W Page 1 of 7 AON6444L Electrical Characteristics TJ=25°C unless otherwise noted |
| More datasheets: B10-03B | B10-05B | TIPL762A-S | TIPL762-S | 80-000365 | 80-000454 | 80-000382 | 80-000413 | 80-000334 | 80-000395 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AON6444L Datasheet file may be downloaded here without warranties.