AO4708
AO4708 Datasheet
AO4708
| Part | Datasheet |
|---|---|
AO4708 |
AO4708 (pdf) |
| PDF Datasheet Preview |
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| AO4708 30V N-Channel MOSFET SRFET TM SRFET TM AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Product Summary VDS V = 30V ID =15A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C IDSM Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.3mH B Power DissipationA TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 15 12 80 25 94 -55 to 150 SRFETTM Soft Recovery MOSFET Integrated Schottky Diode Units V A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 32 60 Maximum Junction-to-Lead C Steady-State Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4708 Electrical Characteristics TJ=25°C unless otherwise noted |
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