2N5245_J35Z
2N5245_J35Z Datasheet
2N5245
| Part | Datasheet |
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2N5245_J35Z |
2N5245_J35Z (pdf) |
| Related Parts | Information |
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2N5245_L99Z |
2N5245_L99Z |
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2N5245 |
2N5245 |
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| 2N5245 2N5245 N-Channel RF Amplifier • This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. • Sourced from process TO-92 1 Gate Source Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TJ, TSTG Operating and Storage Junction Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Ratings 30 -30 10 -55 ~ 150 NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR GSS Gate-Source Breakdwon Voltage IGSS VGS off Gate-Source Cutoff Voltage On Characteristics IG = 1.0µA, VDS = 0 VGS = 25V, VDS = 0 VDS = 15V, ID = 1.0nA IDSS Zero-Gate Voltage Drain Current * Small Signal Characteristics VDS = 15V, VGS = 0 Forward Transferconductance goss Common- Source Output Conductance * Pulse Test Pulse 300µs VGS = 0V, VDS = 15V, f = 1.0kHz VGS = 0V, VDS = 15V, f = 1.0kHz Min. -30 5 4500 Max. Units 11000 µmhos 50 µmhos |
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