AO4437L

AO4437L Datasheet

AO4437 P-Channel Enhancement Mode Field Effect Transistor

Part	Datasheet
AO4437L	AO4437L (pdf)

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AO4437 P-Channel Enhancement Mode Field Effect Transistor The AO4437 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO4437 is Pb-free meets ROHS & Sony 259 specifications . AO4437L is a Green Product ordering option. AO4437 and AO4437L are electrically identical. VDS V = -12V ID = -11 A VGS = -4.5V RDS ON < VGS = -4.5V RDS ON < VGS = -2.5V RDS ON < VGS = -1.8V ESD Rating 4KV HBM SOIC-8 Top View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum -12 ±8 -11 -9 -20 3 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t 10s Steady-State 31 63 Steady-State Max 40 75 30 Units V W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4437 Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=-9.6V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±4.5V VDS=0V, VGS=±8V VGS th Gate Threshold Voltage VDS=VGS ID=-250µA ID ON

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AO4437 P-Channel Enhancement Mode Field Effect Transistor
The AO4437 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO4437 is Pb-free meets ROHS & Sony 259 specifications . AO4437L is a Green Product ordering option. AO4437 and AO4437L are electrically identical.

VDS V = -12V ID = -11 A VGS = -4.5V RDS ON < VGS = -4.5V RDS ON < VGS = -2.5V RDS ON < VGS = -1.8V ESD Rating 4KV HBM

SOIC-8 Top View

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain TA=25°C

Current A

TA=70°C

Pulsed Drain Current B

TA=25°C Power Dissipation A TA=70°C

Junction and Storage Temperature Range TJ, TSTG

Maximum -12 ±8 -11 -9 -20 3
-55 to 150

Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
t 10s Steady-State
31 63

Steady-State

Max 40 75 30

Units V

W °C

Units °C/W °C/W °C/W

Alpha & Omega Semiconductor, Ltd.

AO4437

Electrical Characteristics TJ=25°C unless otherwise noted

Parameter

Conditions

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=-9.6V, VGS=0V

TJ=55°C

IGSS

Gate-Body leakage current

VDS=0V, VGS=±4.5V VDS=0V, VGS=±8V

VGS th Gate Threshold Voltage

VDS=VGS ID=-250µA

ID ON

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Datasheet ID: AO4437L 516166