IRLBA3803

IRLBA3803 Datasheet

IRLBA3803

Part	Datasheet
IRLBA3803	IRLBA3803 (pdf)

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PD - 91841C IRLBA3803 Power MOSFET ● Logic-Level Gate Drive ● Advanced Process Technology ● 175°C Operating Temperature ● Fast Switching ● Fully Avalanche Rated ● Purchase IRLBA3803/P for solder plated option. VDSS = 30V RDS on = ID = 179AV Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Super-220 is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die. It has increased current handling capability over both the TO-220 and the much larger TO-247 package. This makes it ideal to reduce component count in multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs or have TO-247 performance in a TO-220 outline. Super - 220 This package has also been designed to meet automotive qualification standard Q101. Absolute Maximum Ratings ID TC = 25°C ID TC = 100°C IDM PD = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Q Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche EnergyRU Avalanche CurrentQU Repetitive Avalanche EnergyQ Peak Diode Recovery dv/dt SU Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Recommended clip force Max. 179 V 126V 720 270 ±16 610 71 27 -55 to + 175 300 1.6mm from case 20 Thermal Resistance Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. 58 Units W/°C V mJ A mJ V/ns °C N Units °C/W 05/20/02 IRLBA3803 Electrical Characteristics TJ = 25°C unless otherwise specified Parameter Min. Typ. Max. Units Conditions V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS on

PDF Datasheet Preview

PD - 91841C

IRLBA3803

Power MOSFET
● Logic-Level Gate Drive
● Advanced Process Technology
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Purchase IRLBA3803/P for solder plated option.

VDSS = 30V

RDS on =

ID = 179AV

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The Super-220 is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die. It has increased current handling capability over both the TO-220 and the much larger TO-247 package. This makes it ideal to reduce component count in multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs or have TO-247 performance in a TO-220 outline.

Super - 220

This package has also been designed to meet automotive qualification standard Q101.

Absolute Maximum Ratings

ID TC = 25°C ID TC = 100°C IDM PD = 25°C

VGS EAS IAR EAR dv/dt TJ TSTG

Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Q Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche EnergyRU Avalanche CurrentQU Repetitive Avalanche EnergyQ Peak Diode Recovery dv/dt SU Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Recommended clip force

Max. 179 V 126V 720 270
±16 610 71 27 -55 to + 175
300 1.6mm from case 20

Thermal Resistance

Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

Typ.

Max. 58

Units

W/°C

V mJ A mJ V/ns
°C N

Units
°C/W
05/20/02

IRLBA3803

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter

Min. Typ. Max. Units

Conditions

V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient

RDS on

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Datasheet ID: IRLBA3803 639096