IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25
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IPB25N06S3-25 (pdf) |
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IPP25N06S325XK |
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IPI25N06S3-25 |
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Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product RoHS compliant • 100% Avalanche tested IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 Product Summary V DS R DS on ,max SMD version ID 55 V 25 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB25N06S3-25 IPI25N06S3-25 IPP25N06S3-25 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N0625 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Conditions Continuous drain current1 T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2 Pulsed drain current2 Avalanche energy, single pulse2 I D,pulse E AS T C=25 °C I D=12.5 A Avalanche current, single pulse Gate source voltage3 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value Unit ±20 -55 +175 55/175/56 2007-11-07 IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 Parameter Conditions min. Values typ. Unit max. Thermal characteristics2 Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA Removal of ordering code Implementation of avalanche current single pulse Removal of ESD class Update of Infineon address Removal of foot note 3, avalanche diagrams Pulse current from 100A to 50A Update of Qrr and trr Update of disclaimer Implementation of RoHS and AEC logo, update of feature list Update of data sheet layout Adaptation of Ias implementation of footnote 2 for Eas specification removal of Vdg specification from data sheet page 9 2007-11-07 |
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