IRL3302

IRL3302 Datasheet

IRL3302

Part	Datasheet
IRL3302	IRL3302 (pdf)

Related Parts	Information
IRL3302L	IRL3302L

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l Advanced Process Technology l Optimized for 4.5V Gate Drive l Ideal for CPU Core DC-DC Converters l 150°C Operating Temperature l Fast Switching These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID TC = 25°C ID TC = 100°C IDM PD = 25°C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS 4.5V Continuous Drain Current, VGS 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Start Up Transient, tp = 100µs Single Pulse Avalanche Energy Avalanche Repetitive Avalanche Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RqJC RqCS RqJA Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient PD 9.1696A IRL3302 Power MOSFET VDSS = 20V RDS on = 0.020W ID = 39A TO-220AB Max. 39 25 160 57 ± 10 14 130 23 -55 to + 150 300 1.6mm from case 10 lbf•in 1.1N•m Units W/°C mJ A mJ V/ns Typ. Max. 62 Units °C/W 11/18/97 IRL3302 Electrical Characteristics TJ = 25°C unless otherwise specified Parameter V BR DSS Drain-to-Source Breakdown Voltage DV BR DSS/DTJ Breakdown Voltage Temp. Coefficient RDS on VGS th gfs Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS IGSS

PDF Datasheet Preview

l Advanced Process Technology
l Optimized for 4.5V Gate Drive
l Ideal for CPU Core DC-DC Converters
l 150°C Operating Temperature
l Fast Switching

These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum cost.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings

ID TC = 25°C ID TC = 100°C IDM PD = 25°C

VGS VGSM

EAS IAR EAR dv/dt TJ TSTG

Parameter Continuous Drain Current, VGS 4.5V Continuous Drain Current, VGS 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Start Up Transient, tp = 100µs Single Pulse Avalanche Energy Avalanche Repetitive Avalanche Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew

Thermal Resistance

RqJC RqCS RqJA

Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

PD 9.1696A

IRL3302

Power MOSFET

VDSS = 20V

RDS on = 0.020W

ID = 39A

TO-220AB

Max. 39 25 160 57 ± 10 14
130 23 -55 to + 150
300 1.6mm from case 10 lbf•in 1.1N•m

Units

W/°C
mJ A mJ V/ns

Typ.

Max. 62

Units °C/W
11/18/97

IRL3302

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter V BR DSS Drain-to-Source Breakdown Voltage DV BR DSS/DTJ Breakdown Voltage Temp. Coefficient

RDS on

VGS th gfs

Static Drain-to-Source On-Resistance

Gate Threshold Voltage Forward Transconductance

IDSS

IGSS

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Datasheet ID: IRL3302 639091