MCT4
MCT4 Datasheet
MCT4
| Part | Datasheet |
|---|---|
MCT4 |
MCT4 (pdf) |
| PDF Datasheet Preview |
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| PHOTOTRANSISTOR OPTOCOUPLER PACKAGE DIMENSIONS MCT4 DIA. 3 45° Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions unless otherwise specified. SCHEMATIC ANODE 1 CATHODE 3 2 COLLECTOR 4 EMITTER The MCT4 is a standard four-lead, TO-18 package containing a GaAs infrared emitting diode optically coupled to an NPN silicon planar phototransistor. • Hermetically package • High current transfer ratio typically 35% • High isolation resistance 1011 ohms at 500 volts • High voltage isolation emitter to detector 2001 Fairchild Semiconductor Corporation DS300241 8/13/01 1 OF 6 PHOTOTRANSISTOR OPTOCOUPLER MCT4 ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified Parameter Rating Operating Temperature Storage Temperature Soldering Temperature Flow EMITTER Power Dissipation at 25°C Ambient 1 TOPR TSTG TSOL-F -55 to +125 -65 to +150 260 for 10 sec Forward Current - Peak 1 µs pulse, 300 pps DETECTOR Power Dissipation 25°C Ambient 2 Collector to Emitter Voltage Emitter to Collector Voltage COUPLER Total Power Dissipation 3 Isolation Voltage IF VR IF pk VCEO VECO 200 30 7 250 1000 ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C INDIVIDUAL COMPONENT CHARACTERISTICS Parameters EMITTER Collector to Emitter to Collector Leakage Current Collector to Emitter Capacitance Collector to Emitter Test Conditions IF = 40 mA VR = V=0V IC = mA, IF = 0 IE = 100 µA, IF = 0 VCE = 10 V, IF = 0 VCE = 0 Symbol Min VF IR C BVCEO BVECO |
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