HUF76609D3

HUF76609D3 Datasheet

HUF76609D3, HUF76609D3S

Part	Datasheet
HUF76609D3	HUF76609D3 (pdf)

Related Parts	Information
HUF76609D3S	HUF76609D3S

PDF Datasheet Preview
Data Sheet HUF76609D3, HUF76609D3S December 2001 10A, 100V, Ohm, N-Channel, Logic Level Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN FLANGE HUF76609D3 HUF76609D3S • Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Ordering Information PACKAGE BRAND HUF76609D3 TO-251AA 76609D HUF76609D3S TO-252AA 76609D NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76609D3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF76609D3, HUF76609D3S UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±16 Drain Current Continuous = = = = 11220055o00oCCooCC,, Pulsed Drain Current IDM Figure 4 Pulsed Avalanche Rating UIS Figures 6, 17, 18 Power Dissipation Derate Above 25oC Operating and StorageTemperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief TB334 Tpkg NOTE TJ = 25oC to 150oC. 49 -55 to 175 300 260 W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Product reliability information can be found at For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUF76609D3, HUF76609D3S Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V, TC = -40oC Figure 12 VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC VGS = ±16V Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS VGS TH rDS ON

PDF Datasheet Preview

Data Sheet

HUF76609D3, HUF76609D3S

December 2001
10A, 100V, Ohm, N-Channel, Logic Level Power MOSFET

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN FLANGE

SOURCE DRAIN GATE

GATE SOURCE

DRAIN FLANGE

HUF76609D3

HUF76609D3S
• Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V
• Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information

PACKAGE

BRAND

HUF76609D3

TO-251AA
76609D

HUF76609D3S

TO-252AA
76609D
NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76609D3ST.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HUF76609D3, HUF76609D3S

UNITS

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±16

Drain Current

Continuous
= = = =
11220055o00oCCooCC,,

Pulsed Drain Current IDM

Figure 4

Pulsed Avalanche Rating UIS

Figures 6, 17, 18

Power Dissipation Derate Above 25oC

Operating and StorageTemperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief TB334 Tpkg NOTE TJ = 25oC to 150oC.
49 -55 to 175
300 260

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Product reliability information can be found at For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

HUF76609D3, HUF76609D3S

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BVDSS IDSS IGSS

ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V, TC = -40oC Figure 12

VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC

VGS = ±16V

Gate to Source Threshold Voltage Drain to Source On Resistance

THERMAL SPECIFICATIONS

VGS TH rDS ON

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Datasheet ID: HUF76609D3 633964