GA200SA60U

GA200SA60U Datasheet

GA200SA60U

Part	Datasheet
GA200SA60U	GA200SA60U (pdf)

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PD -50066A INSULATED GATE BIPOLAR TRANSISTOR GA200SA60U Ultra-FastTM Speed IGBT • UltraFast Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package 2,500 Volt AC/RMS • Very low internal inductance 5 nH typ. • Industry standard outline n-channel VCES = 600V VCE on typ. = 1.60V = 15V, IC = 100A • Designed for increased operating efficiency in power conversion UPS, SMPS, Welding, Induction heating • Lower overall losses available at frequencies 20kHz • Easy to assemble and parallel • Direct mounting to heatsink • Lower EMI, requires less snubbing • Plug-in compatible with other SOT-227 packages Absolute Maximum Ratings VCES IC TC = 25°C IC TC = 100°C ICM ILM VGE EARV VISOL PD TC = 25°C PD TC = 100°C TJ TSTG S O T -2 7 Max. 600 200 100 400 ± 20 160 2500 500 200 -55 to + 150 -55 to + 150 12 lbf •in 1.3N•m Units V V mJ V W Thermal Resistance Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Weight of Module Typ. 30 Max. Units °C/W gm 4/24/2000 GA200SA60U Electrical Characteristics TJ = 25°C unless otherwise specified Parameter Min. Typ. Max. Units Conditions V BR CES Collector-to-Emitter Breakdown Voltage 600 V BR ECS Emitter-to-Collector Breakdown Voltage T 18 DV BR CES/DTJ Temperature Coeff. of Breakdown Voltage V/°C VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0A VGE = 0V, IC = 10 mA IC = 100A VGE = 15V VCE ON Collector-to-Emitter Saturation Voltage VGE th Gate Threshold Voltage Temperature Coeff. of Threshold Voltage

PDF Datasheet Preview

PD -50066A

INSULATED GATE BIPOLAR TRANSISTOR

GA200SA60U

Ultra-FastTM Speed IGBT
• UltraFast Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolate package 2,500 Volt AC/RMS
• Very low internal inductance 5 nH typ.
• Industry standard outline
n-channel

VCES = 600V VCE on typ. = 1.60V
= 15V, IC = 100A
• Designed for increased operating efficiency in power conversion UPS, SMPS, Welding, Induction heating
• Lower overall losses available at frequencies 20kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages

Absolute Maximum Ratings

VCES IC TC = 25°C IC TC = 100°C ICM ILM VGE EARV VISOL PD TC = 25°C PD TC = 100°C TJ TSTG

S O T -2 7

Max. 600 200 100 400 ± 20 160 2500 500 200 -55 to + 150 -55 to + 150 12 lbf
•in 1.3N•m

Units V

V mJ V W

Thermal Resistance

Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Weight of Module

Typ. 30

Max.

Units °C/W gm
4/24/2000

GA200SA60U

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter

Min. Typ. Max. Units

Conditions

V BR CES

Collector-to-Emitter Breakdown Voltage 600

V BR ECS

Emitter-to-Collector Breakdown Voltage T 18

DV BR CES/DTJ Temperature Coeff. of Breakdown Voltage

V/°C

VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0A VGE = 0V, IC = 10 mA IC = 100A

VGE = 15V

VCE ON

Collector-to-Emitter Saturation Voltage

VGE th

Gate Threshold Voltage

Temperature Coeff. of Threshold Voltage

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Datasheet ID: GA200SA60U 639001