IRFZ34E

IRFZ34E Datasheet

IRFZ34E

Part	Datasheet
IRFZ34E	IRFZ34E (pdf)

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID TC = 25°C ID TC = 100°C IDM PD = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Repetitive Avalanche Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient PD - 9.1672A IRFZ34E Power MOSFET VDSS = 60V RDS on = ID = 28A TO-220AB Max. 28 20 112 68 ± 20 97 17 -55 to + 175 300 1.6mm from case 10 lbf•in 1.1N•m Units W/°C V mJ A mJ V/ns Min. Typ. Max. 62 Units °C/W 11/4/97 IRFZ34E Electrical Characteristics TJ = 25°C unless otherwise specified

PDF Datasheet Preview

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Ease of Paralleling

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings

ID TC = 25°C ID TC = 100°C IDM PD = 25°C

VGS EAS IAR EAR dv/dt TJ TSTG

Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Repetitive Avalanche Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew

Thermal Resistance

Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

PD - 9.1672A

IRFZ34E

Power MOSFET

VDSS = 60V

RDS on =

ID = 28A

TO-220AB

Max. 28 20 112 68 ± 20 97 17
-55 to + 175
300 1.6mm from case 10 lbf•in 1.1N•m

Units

W/°C

V mJ A mJ V/ns

Min.

Typ.

Max. 62

Units °C/W
11/4/97

IRFZ34E

Electrical Characteristics TJ = 25°C unless otherwise specified

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Datasheet ID: IRFZ34E 639050