EMF21T2R
EMF21T2R Datasheet
EMF21 / UMF21N
| Part | Datasheet |
|---|---|
EMF21T2R |
EMF21T2R (pdf) |
| Related Parts | Information |
|---|---|
UMF21NTR |
UMF21NTR |
| PDF Datasheet Preview |
|---|
| Transistors EMF21 / UMF21N Power management dual transistors EMF21 / UMF21N 2SA2018 and DTC114E are housed independently in a EMT6 or UMT6 package. zApplication Power management circuit zFeatures 1 Power switching circuit in a single package. 2 Mounting cost and area can be cut in half. zStructure Silicon epitaxial planar transistor zExternal dimensions Units mm EMF21 Each lead has same dimensions ROHM EMT6 Abbreviated symbol F21 UMF21N zEquivalent circuits DTr2 R1 Tr1 6 0.1Min. ROHM UMT6 EIAJ SC-88 Each lead has same dimensions Abbreviated symbol :F21 zPackage, marking, and packaging specifications Type Package Marking Code Basic ordering unit pieces EMF21 EMT6 F21 T2R 8000 UMF21N UMT6 F21 TR 3000 Transistors EMF21 / UMF21N zAbsolute maximum ratings Ta=25°C Parameter Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO IC Collector current Power dissipation Junction temperature Range of storage temperature Tstg ∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Limits −15 −12 −6 −500 150 TOTAL 150 −55~+150 Unit V mA A ∗1 mW ∗2 °C °C DTr2 Parameter Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Tstg ∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land. Limits 50 −10~+40 100 50 150 TOTAL 150 −55~+150 Unit V mA ∗1 mA mW ∗2 °C °C zElectrical characteristics Ta=25°C Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO |
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