BLF7G21L-160P,112
BLF7G21L-160P,112 Datasheet
BLF7G21L-160P BLF7G21LS-160P
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BLF7G21L-160P,112 |
BLF7G21L-160P,112 (pdf) |
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| BLF7G21L-160P BLF7G21LS-160P Power LDMOS transistor Product profile 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz, also suitable for operation at 1495 MHz to 1511 MHz. Table Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation VDS PL AV Gp ACPR mA V W dB % dBc 2-carrier W-CDMA 1930 to 1990 1080 28 45 34 [1] 1-carrier W-CDMA 1930 to 1990 1080 28 50 36 [2] [1] Test signal 3GPP test model 1 64 DPCH PAR = dB at % probability on CCDF carrier spacing 5 MHz. [2] Test signal 3GPP test model 1 64 DPCH PAR = dB at % probability on CCDF. Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Designed for broadband operation 1800 MHz to 2050 MHz Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to 2050 MHz frequency range BLF7G21L-160P BLF7G21LS-160P Power LDMOS transistor Pinning information Table Pinning BLF7G21L-160P SOT1121A drain1 drain2 gate1 gate2 source BLF7G21LS-160P SOT1121B drain1 drain2 gate1 gate2 source [1] Connected to flange. Ordering information Simplified outline Graphic symbol 2 sym117 2 sym117 Table Ordering information Type number Package Name Description BLF7G21L-160P - flanged LDMOST ceramic package 2 mounting holes 4 leads BLF7G21LS-160P - earless flanged ceramic package 4 leads Version SOT1121A SOT1121B Limiting values Table Limiting values In accordance with the Absolute Maximum Rating System IEC Symbol Parameter Conditions drain-source voltage gate-source voltage drain current Tstg storage temperature junction temperature Min Max Unit +13 V +150 C 200 C BLF7G21L-160P_7G21LS-160P#4 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. All rights reserved. 2 of 15 BLF7G21L-160P BLF7G21LS-160P Power LDMOS transistor Thermal characteristics Table Symbol Rth j-c Thermal characteristics Parameter thermal resistance from junction to case Characteristics Conditions Tcase = 80 C PL = 100 W Typ Unit K/W Table Characteristics Tj = 25 C per section unless otherwise specified. Symbol Parameter Conditions V BR DSS VGS th IDSS Ordering information 2 Limiting values. 2 Thermal characteristics 3 Characteristics 3 Test information 3 Ruggedness in class-AB operation 4 1-Carrier W-CDMA 5 2-Carrier W-CDMA 5 MHz 6 2-Carrier W-CDMA 10 MHz 7 Test circuit. 8 Impedance information 9 Package outline 10 Abbreviations 12 Legal information. 13 Data sheet status 13 Definitions 13 Disclaimers 13 Trademarks. 14 Contact information. 14 Contents 15 Please be aware that important notices concerning this document and the product s described herein, have been included in section ‘Legal information’. Ampleon The Netherlands B.V. All rights reserved. For more information, please visit For sales office addresses, please visit: Date of release 1 September 2015 Document identifier BLF7G21L-160P_7G21LS-160P#4 |
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