USB10H

USB10H Datasheet

USB10H

Part	Datasheet
USB10H	USB10H (pdf)

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USB10H February 1999 USB10H Dual P-Channel 2.5V Specified MOSFET These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. • A, -20 V. RDS on = VGS = V RDS on = VGS = V • Low gate charge 3 nC typical . These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Applications • Load switch • Battery protection • Power management • Fast switching speed. • High performance trench technology for extremely low RDS ON . • SuperSOTTM-6 package small footprint 72% smaller than standard SO-8 low profile 1mm thick . D2 S1 SuperSOT TM -6 S2 G1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation Note 1a Note 1a Note 1b Note 1c TJ, Tstg Operating and Storage Junction Temperature Range Ratings -20 ±8 -5 -55 to +150 Units Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Case Note 1 °C/W °C/W Package Outlines and Ordering Information Device Marking Device Reel Size USB10H 7’’ Tape Width 8mm Quantity 3000 units Fairchild Semiconductor Corporation USB10H Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = -250 µA, Referenced to 25°C VDS = -16 V, VGS = 0 V mV/°C IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR -100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID on On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C mV/°C

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USB10H

February 1999

USB10H

Dual P-Channel 2.5V Specified MOSFET

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
• A, -20 V. RDS on = VGS = V

RDS on = VGS = V
• Low gate charge 3 nC typical .

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Applications
• Load switch
• Battery protection
• Power management
• Fast switching speed.
• High performance trench technology for extremely
low RDS ON .
• SuperSOTTM-6 package small footprint 72% smaller
than standard SO-8 low profile 1mm thick .

D2 S1

SuperSOT TM -6

S2 G1

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Parameter

VDSS VGSS ID

Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous
- Pulsed Power Dissipation for Single Operation

Note 1a

Note 1a Note 1b

Note 1c

TJ, Tstg

Operating and Storage Junction Temperature Range

Ratings
-20 ±8 -5 -55 to +150

Units

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Note 1a

Thermal Resistance, Junction-to-Case

Note 1
°C/W °C/W
Package Outlines and Ordering Information

Device Marking

Device

Reel Size

USB10H
7’’

Tape Width 8mm

Quantity 3000 units

Fairchild Semiconductor Corporation

USB10H

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = -250 µA

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

ID = -250 µA, Referenced to 25°C VDS = -16 V, VGS = 0 V
mV/°C

IGSSF

Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V
100 nA

IGSSR
-100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static Drain-Source On-Resistance

ID on

On-State Drain Current

Forward Transconductance

VDS = VGS, ID = -250 µA

ID = -250 µA, Referenced to 25°C
mV/°C

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Datasheet ID: USB10H 634814