AUXFN8403TR

AUXFN8403TR Datasheet

AUXFN8403

Part	Datasheet
AUXFN8403TR	AUXFN8403TR (pdf)

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AUTOMOTIVE GRADE • Advanced Process Technology • Ultra Low On-Resistance • 175°C Operating Temperature • Fast Switching • Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant • Automotive Qualified * Description Specifically designed for Automotive application s, this Power MOSFE T utilizes the latest processi ng techniques to achieve e xtremely low on-re sistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast swithcing speed and improved repetitive avalanche rating. These fe atures combine to make this produuct an extremely efficient and reliable devoce for use in Automotive and wide variety of other applications. • Electric Power Steering EPS • Battery Switch • Start/Stop Micro Hybrid • Heavy Loads • DC-DC Converter VDSS RDS on typ. max ID Silicon Limited ID Package Limited G Gate AUXFN8403 D Drain PQFN 5X6 mm S Source Base Part Number Package Type AUXFN8403 PQFN 5mm x 6mm Standard Pack Form Tape and Reel Tape and Reel Quantity 4000 400 Orderable Part Number AUXFN8403TR AUXFN8403TR2 Absolute Maximum Ratings Stresses beyond those listed und er “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress r atings only and functional operation of the device at these or any other condition beyond those in dicated in the sp ecifications is no t implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature TA is 25°C, unless otherwise specified. ID TC Bottom = 25°C ID TC Bottom = 100°C ID TC = 25°C IDM PD Bottom = 25°C VGS EAS Tested IAR EAR TJ TSTG Parameter Continuous Drain Current, VGS 10V Silicon Limited Continuous Drain Current, VGS 10V Silicon Limited Continuous Drain Current, VGS 10V Package Limited Pulsed Drain Current  Power Dissipation  Linear Derating Factor  Gate-to-Source Voltage Single Pulse Avalanche Energy Thermally Limited  Single Pulse Avalanche Energy Avalanche Current  Repetitive Avalanche Energy  Operating Junction and Storage Temperature Range Max. 95 520 94 ± 20 100 165 See Fig. 14, 15, 22a, 22b -55 to + 175 Units W/°C V mJ A is a registered trademark of International Rectifier. *Qualification standards can be found at 1 2013 International Rectifier March 13, 2013 AUXFN8403 Thermal Resistance Bottom Top <10s

PDF Datasheet Preview

AUTOMOTIVE GRADE
• Advanced Process Technology
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified *

Description Specifically designed for Automotive application s, this Power MOSFE T utilizes the latest processi ng techniques to achieve e xtremely low on-re sistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast swithcing speed and improved repetitive avalanche rating. These fe atures combine to make this produuct an extremely efficient and reliable devoce for use in Automotive and wide variety of other applications.
• Electric Power Steering EPS
• Battery Switch
• Start/Stop Micro Hybrid
• Heavy Loads
• DC-DC Converter

VDSS RDS on typ.
max ID Silicon Limited ID Package Limited

G Gate

AUXFN8403

D Drain

PQFN 5X6 mm

S Source

Base Part Number

Package Type

AUXFN8403

PQFN 5mm x 6mm

Standard Pack

Form Tape and Reel Tape and Reel

Quantity 4000 400

Orderable Part Number

AUXFN8403TR AUXFN8403TR2

Absolute Maximum Ratings

Stresses beyond those listed und er “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress r atings only and functional operation of the device at these or any other condition beyond those in dicated in the sp ecifications is no t implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature TA is 25°C, unless otherwise specified.

ID TC Bottom = 25°C

ID TC Bottom = 100°C ID TC = 25°C IDM PD Bottom = 25°C

VGS EAS Tested IAR EAR TJ TSTG

Parameter

Continuous Drain Current, VGS 10V Silicon Limited

Continuous Drain Current, VGS 10V Silicon Limited

Continuous Drain Current, VGS 10V Package Limited Pulsed Drain Current  Power Dissipation  Linear Derating Factor  Gate-to-Source Voltage Single Pulse Avalanche Energy Thermally Limited  Single Pulse Avalanche Energy Avalanche Current  Repetitive Avalanche Energy  Operating Junction and Storage Temperature Range

Max.
95 520 94 ± 20 100 165 See Fig. 14, 15, 22a, 22b
-55 to + 175

Units

W/°C

V mJ A
is a registered trademark of International Rectifier. *Qualification standards can be found at
1 2013 International Rectifier

March 13, 2013

AUXFN8403

Thermal Resistance

Bottom Top <10s

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Datasheet ID: AUXFN8403TR 638994