TN6719A
TN6719A Datasheet
TN6719A
| Part | Datasheet |
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TN6719A |
TN6719A (pdf) |
| Related Parts | Information |
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TN6719A_D27Z |
TN6719A_D27Z |
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TN6719A_D75Z |
TN6719A_D75Z |
| PDF Datasheet Preview |
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| TN6719A TN6719A Discrete POWER & Signal Technologies TO-226 NPN High Voltage Amplifier This device is designed for use in high voltage applications Sourced from Process See MPSA42 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range 200 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TN6719A 125 50 Units V mA °C Units W mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation TN6719A NPN High Voltage Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS |
| More datasheets: BRR.2S.200.PZSN | MHP-TA6-9-77 | DCME-17W5S-A197 | MPC942PFA | R280-080-000 | DCMV-21HA4S-N-A197 | JANTXV2N5154 | JANTX2N5154 | MDM-31PCBRM7 | R280-100-000 |
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