• Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads Si per MIL-PRF-19500/544
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JANTX2N5154 (pdf) |
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JANTXV2N5154 |
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NPN Power Silicon Transistor 2N5152, 2N5152L & 2N5154, 2N5154L • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads Si per MIL-PRF-19500/544 • TO-5 Package 2N5152L, 2N5154L TO-39 TO-205AD Package 2N5152, 2N5154 Maximum Ratings TC = +25°C unless otherwise noted Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Total Power Dissipation TA = +25 °C TC = +25 °C Operating & Storage Temperature Range Thermal Resistance, Junction-to-Case Symbol VCEO VCBO VEBO IC PT Top, Tstg Value 80 100 10 -65 to +200 10 Units Vdc Adc W °C °C/W Electrical Characteristics TA = +25°C unless otherwise noted OFF Characteristics Collector - Emitter Breakdown Voltage IC = 100 mAdc, IB = 0 Emitter - Base Cutoff Current VEB = Vdc, IC = 0 VEB = Vdc, IC = 0 Collector - Emitter Cutoff Current VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 Collector - Emitter Cutoff Current VCE = 40 Vdc, IB = 0 Symbol V BR CEO IEBO ICES ICEO Mimimum 80 ------- Maximum Units uAdc mAdc uAdc mAdc uAdc 2N5152, 2N5154 2N5152L, 2N5154L Electrical Characteristics -con’t ON Characteristics Forward Current Transfer Ratio IC = 50 mAdc, VCE = Vdc IC = Adc, VCE = Vdc IC = Adc, VCE = Vdc 2N5152 |
More datasheets: BRR.3S.200.PZSN | BRR.1S.200.PZSN | BRR.0S.200.PZSGY | BRR.2S.200.PZSN | MHP-TA6-9-77 | DCME-17W5S-A197 | MPC942PFA | R280-080-000 | DCMV-21HA4S-N-A197 | JANTXV2N5154 |
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