TN6719A_D27Z

TN6719A_D27Z Datasheet


TN6719A

Part Datasheet
TN6719A_D27Z TN6719A_D27Z TN6719A_D27Z (pdf)
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TN6719A

TN6719A

Discrete POWER & Signal Technologies

TO-226

NPN High Voltage Amplifier

This device is designed for use in high voltage applications Sourced from Process See MPSA42 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter

Value

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC TJ, Tstg

Collector Current - Continuous Operating and Storage Junction Temperature Range
200 -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

TN6719A 125 50

Units

V mA °C

Units

W mW/°C °C/W °C/W
1997 Fairchild Semiconductor Corporation

TN6719A

NPN High Voltage Amplifier
continued

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS
More datasheets: MHP-TA6-9-77 | DCME-17W5S-A197 | MPC942PFA | R280-080-000 | DCMV-21HA4S-N-A197 | JANTXV2N5154 | JANTX2N5154 | MDM-31PCBRM7 | R280-100-000 | TN6719A


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Datasheet ID: TN6719A_D27Z 634806