2N5415
2N5415 Datasheet
| Part | Datasheet |
|---|---|
2N5415 |
2N5415 (pdf) |
| Related Parts | Information |
|---|---|
TN5415A |
TN5415A |
| PDF Datasheet Preview |
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| TN5415A TN5415A Discrete POWER & Signal Technologies TO-226 PNP High Voltage Amplifier This device is designed for use as high voltage drivers requiring collector currents to 100 mA. Sourced from Process See MPSA92 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range 100 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TN5415A 125 50 Units V mA °C Units W mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation TN5415A PNP High Voltage Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS |
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