BTS141E3064NKSA1

BTS141E3064NKSA1 Datasheet

Smart Low Side Power Switch HITFET BTS 141

Part	Datasheet
BTS141E3064NKSA1	BTS141E3064NKSA1 (pdf)

Related Parts	Information
BTS141 E3045A	BTS141 E3045A

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Smart Low Side Power Switch HITFET BTS 141 Features • Logic Level Input • Input Protection ESD •=Thermal shutdown with latch • Overload protection • Short circuit protection • Overvoltage protection • Current limitation • Status feedback with external input resistor • Analog driving possible • AEC qualified • Green product RoHS compliant Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS on I D lim I D ISO EAS 60 V 28 25 A 12 A 4000 mJ Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits N channel vertical power FET in Smart chip on chip technology. Providing embedded protection functions. LOAD dv/dt lim itation C u rre n t lim itation O ve rvo lta g e protection D ra in 2 O v e rlo a d p ro te c tio n O ve rtem perature p ro te c tio n SShhoorrtt cciirrccuuiitt pprrootteeccttiioonn Source H IT F E T Datasheet Smart Low Side Power Switch HITFET BTS 141 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current 1 -0.2V VIN 10V VIN < -0.2V or VIN > 10V VDS SC IIN Operating temperature Storage temperature Tstg Power dissipation Ptot TC = 25 °C Unclamped single pulse inductive energy ID ISO = 12 A Electrostatic discharge voltage Human Body Model VESD according to MIL STD 883D, method and EOS/ESD assn. standard S5.1 - 1993 Load dump protection VLoadDump2 = VA + VS VIN=low or high VA=13.5 V td = 400 ms, RI = 2 ID=0,5*12A td = 400 ms, RI = 2 ID= 12A Value 60 32 no limit \| IIN \| 2 - 40 +150 - 55 +150 4000

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Smart Low Side Power Switch HITFET BTS 141

Features
• Logic Level Input
• Input Protection ESD
•=Thermal shutdown with latch
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Status feedback with external input resistor
• Analog driving possible
• AEC qualified
• Green product RoHS compliant

Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy

VDS RDS on I D lim I D ISO EAS
60 V 28 25 A 12 A 4000 mJ

Application
• All kinds of resistive, inductive and capacitive loads in switching or linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits

N channel vertical power FET in Smart chip on chip technology. Providing embedded protection functions.

LOAD
dv/dt lim itation

C u rre n t lim itation

O ve rvo lta g e protection

D ra in 2

O v e rlo a d p ro te c tio n

O ve rtem perature
p ro te c tio n

SShhoorrtt cciirrccuuiitt pprrootteeccttiioonn

Source

H IT F E T

Datasheet

Smart Low Side Power Switch HITFET BTS 141

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter

Drain source voltage

Drain source voltage for short circuit protection Continuous input current 1
-0.2V VIN 10V VIN < -0.2V or VIN > 10V

VDS SC IIN

Operating temperature

Storage temperature

Tstg

Power dissipation

Ptot

TC = 25 °C

Unclamped single pulse inductive energy ID ISO = 12 A

Electrostatic discharge voltage Human Body Model VESD according to MIL STD 883D, method and

EOS/ESD assn. standard S5.1 - 1993

Load dump protection VLoadDump2 = VA + VS VIN=low or high VA=13.5 V td = 400 ms, RI = 2 ID=0,5*12A td = 400 ms, RI = 2 ID= 12A

Value 60 32
no limit | IIN | 2 - 40 +150 - 55 +150
4000

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Datasheet ID: BTS141E3064NKSA1 637889