SSM1N45BTF

SSM1N45BTF Datasheet

SSM1N45B

Part	Datasheet
SSM1N45BTF	SSM1N45BTF (pdf)

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SSM1N45B SSM1N45B 450V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic ballasts based on half bridge configuration. • 0.5A, 450V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical pF • 100% avalanche tested • Improved dv/dt capability • Gate-Source Voltage ± 50V guaranteed G SOT-223 SSM Series ● ● Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C Power Dissipation TL = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient Note 6b SSM1N45B 450 ± 50 108 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Units °C/W

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SSM1N45B

SSM1N45B
450V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic ballasts based on half bridge configuration.
• 0.5A, 450V, RDS on = = 10 V
• Low gate charge typical nC
• Low Crss typical pF
• 100% avalanche tested
• Improved dv/dt capability
• Gate-Source Voltage ± 50V guaranteed

G SOT-223

SSM Series
● ●

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, Tstg TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C Power Dissipation TL = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Ambient

Note 6b

SSM1N45B 450 ± 50 108
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Units °C/W

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Datasheet ID: SSM1N45BTF 634786